D6.27 The circuit of Fig. 6.27(a) is to be fabricated using a transistor type whose ß is specified to be in the range of 50 to 150. That is, individual units of this same transistor type can have ß values anywhere in this range. Redesign the circuit by selecting a new value for Re so that all fabricated circuits are guaranteed to be in the active mode. What is the range of collector voltages that the fabricated circuits may exhibit?

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D6.27 The circuit of Fig. 6.27(a) is to be fabricated using a transistor type whose ß is specified to be in the
range of 50 to 150. That is, individual units of this same transistor type can have ß values anywhere
in this range. Redesign the circuit by selecting a new value for Re so that all fabricated circuits
are guaranteed to be in the active mode. What is the range of collector voltages that the fabricated
circuits may exhibit?
=
+5 V Rc =
RB
= 100 ΚΩ
IB
2 ΚΩ
+ 10 V
@
Ic
Transcribed Image Text:D6.27 The circuit of Fig. 6.27(a) is to be fabricated using a transistor type whose ß is specified to be in the range of 50 to 150. That is, individual units of this same transistor type can have ß values anywhere in this range. Redesign the circuit by selecting a new value for Re so that all fabricated circuits are guaranteed to be in the active mode. What is the range of collector voltages that the fabricated circuits may exhibit? = +5 V Rc = RB = 100 ΚΩ IB 2 ΚΩ + 10 V @ Ic
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