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D5.7. Using the values given in this section for the electron and hole mo- bilities in silicon at 300 K, and assuming hole and electron charge densities are 0.0029 C/m³ and -0.0029 C/m³, respectively, find: (a) the component of the conductivity due to holes; (b) the component of the conductivity due to electrons; (c) the conductivity. Ans. 72.5 µS/m; 348 μS/m; 421 μS/m

D5.7. Using the values given in this section for the electron and hole mo- bilities in silicon at 300 K, and assuming hole and electron charge densities are 0.0029 C/m³ and -0.0029 C/m³, respectively, find: (a) the component of the conductivity due to holes; (b) the component of the conductivity due to electrons; (c) the conductivity. Ans. 72.5 µS/m; 348 μS/m; 421 μS/m

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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D5.7. Using the values given in this section for the electron and hole mo- bilities in silicon at 300 K, and assuming hole and electron charge densities are 0.0029 C/m³ and -0.0029 C/m³, respectively, find: (a) the component of the conductivity due to holes; (b) the component of the conductivity due to electrons; (c) the conductivity. Ans. 72.5 µS/m; 348 μS/m; 421 μS/m
Transcribed Image Text:D5.7. Using the values given in this section for the electron and hole mo- bilities in silicon at 300 K, and assuming hole and electron charge densities are 0.0029 C/m³ and -0.0029 C/m³, respectively, find: (a) the component of the conductivity due to holes; (b) the component of the conductivity due to electrons; (c) the conductivity. Ans. 72.5 µS/m; 348 μS/m; 421 μS/m
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