(d) In a Germanium semiconductor at T= 250 K (n = 1x101² cm³), it is found that that Na = 0. Determine po, no, and Na. Po 4no and 2001r

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(d) In a Germanium semiconductor at T= 250 K (ni = 1x1012 cm³), it is found that po = 4no and
that Na = 0. Determine po, no, and Na.
(e) Calculate the intrinsic carrier concentrations of these three bandgap materials at 300K:
Eg = 1.12eV; and Eg = 0.66eV; where pre-factors are B=1.08x10³1 K³.cm³ (1.12€V) and B
= 2.31x1030 K-³.cm³ (0.66eV).
Transcribed Image Text:(d) In a Germanium semiconductor at T= 250 K (ni = 1x1012 cm³), it is found that po = 4no and that Na = 0. Determine po, no, and Na. (e) Calculate the intrinsic carrier concentrations of these three bandgap materials at 300K: Eg = 1.12eV; and Eg = 0.66eV; where pre-factors are B=1.08x10³1 K³.cm³ (1.12€V) and B = 2.31x1030 K-³.cm³ (0.66eV).
Si is doped with 2x1017 boron (B) atoms/cm³ and 6x1017 phosphorous (P) atoms/cm.
Transcribed Image Text:Si is doped with 2x1017 boron (B) atoms/cm³ and 6x1017 phosphorous (P) atoms/cm.
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