(d) Explain how the Fermi energy level changes with doping concentration. Support your answer by sketching the energy level diagram.

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Please answer only part D. i already have answer for Part a, b and c, thanks

Given two Si samples A and B. Sample A doped with 7.5 ×10'3 boron atoms/cm
Sample B doped with 10'6 arsenic atoms/cm 3
(a)
State the type of semiconductor for sample A and sample B. Justify your answer.
(b)
Find the majority and minority carrier concentration at 300 K for sample A.
(c)
Find the majority and minority carrier concentration at 300 K for sample B.
(d)
Explain how the Fermi energy level changes with doping concentration. Support
your answer by sketching the energy level diagram.
Transcribed Image Text:Given two Si samples A and B. Sample A doped with 7.5 ×10'3 boron atoms/cm Sample B doped with 10'6 arsenic atoms/cm 3 (a) State the type of semiconductor for sample A and sample B. Justify your answer. (b) Find the majority and minority carrier concentration at 300 K for sample A. (c) Find the majority and minority carrier concentration at 300 K for sample B. (d) Explain how the Fermi energy level changes with doping concentration. Support your answer by sketching the energy level diagram.
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