(d) A conventional current of 2.0 mA is passed through a thin strip of an n- type doped semiconductor, 3 mm by 12 mm by 0.5 mm in size, that is held in a magnetic field, B = 0.5 T. The material is aligned along Cartesian axes as illustrated, with the current directed in the +y-direction and the magnetic field in the direction. A Hall voltage develops and is given by V = wRHJB, where w is the sample width, RH is the Hall coefficient, and J is the current density. Estimate the Hall voltage (both magnitude and direction) when the donor dopant density is 1022m-3. Z B 1

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(d) A conventional current of 2.0 mA is passed through a thin strip of an n-
type doped semiconductor, 3 mm by 12 mm by 0.5 mm in size, that is held in
a magnetic field, B = 0.5 T. The material is aligned along Cartesian axes as
illustrated, with the current directed in the +y-direction and the magnetic field
in the + direction. A Hall voltage develops and is given by V = wRµJB,
where w is the sample width, RH is the Hall coefficient, and J is the current
density. Estimate the Hall voltage (both magnitude and direction) when the
donor dopant density is 1022m-3.
Z
B
X
Transcribed Image Text:(d) A conventional current of 2.0 mA is passed through a thin strip of an n- type doped semiconductor, 3 mm by 12 mm by 0.5 mm in size, that is held in a magnetic field, B = 0.5 T. The material is aligned along Cartesian axes as illustrated, with the current directed in the +y-direction and the magnetic field in the + direction. A Hall voltage develops and is given by V = wRµJB, where w is the sample width, RH is the Hall coefficient, and J is the current density. Estimate the Hall voltage (both magnitude and direction) when the donor dopant density is 1022m-3. Z B X
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