Consider the power amplifier shown below, let Vcc = 15 V, RB 300N, R1 = 12 N, VBE = 0.6 Vand B = 70 answer the following: Vcc RL RB vs = Vp sin ot (V) Part (a) 1. Find the quiescent voltage that gives maximum power VCEQ V 2. Find the corresponding collector current IcQ A 3. Find the corresponding base current IBQ mA 4. Find the maximum load power PL W

Consider the power amplifier shown below, let Vcc = 15 V, RB 300N, R1 = 12 N, VBE = 0.6 Vand B = 70 answer the following: Vcc RL RB vs = Vp sin ot (V) Part (a) 1. Find the quiescent voltage that gives maximum power VCEQ V 2. Find the corresponding collector current IcQ A 3. Find the corresponding base current IBQ mA 4. Find the maximum load power PL W

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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(a) For the given class A power amplifier, determine the following: i. Efficiency of the amplifier circuit for an input voltage that results in an AC base current of 15.44mApeak and DC collector- emitter voltage, VCEQ of 9.15 V. ii. Value of the collector resistor RC using standard resistance value. +20 V 1.2KOS HE+Vo B= 45 10uF (b) Draw the circuit of a Class C power amplifier and compare in detail its advantage and disadvantage from a class A power amplifier.
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B. Make a sketch of the channel region when VGS=VGS-OFF and make a sketch of the channel region when ID=IDSS and explain why each channel has this shape. C. Assuming that the measured values for the PF5102 were VGS-OFF= -1V and IDSs 10mA, design a common source amplifier for ID=4mA and VDS= 4V using a 12V supply and combination biasing without degeneration as you did in the laboratory. D. Find the input resistance, output resistance, and voltage amplification of your design using the hybrid-pi model and explain how you measured these parameters in the laboratory.
Data sheet below shows design parameters for a Common Source FET Transistor amplifier.VDD = 12V , VD = 0.75 VDD , VG = 0.5 VDD , Cin = Cout = 5muF , K = 1mAV-2 , VTN = 1V , R2 = 10k and ID = 2mA Q. At DC condition,design the circuit by calculating values for VG,R1,RD,VGS,RS and gm of the FET amplifier (show all the calculated steps involved). Propose and draw the DC circuit from the calculated values.