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Consider the MOSFET circuit shown in Figure (Q3). Let V, = 2.0 V and K, = 0.4 mA/V?, assume the device is operating in one of two regions, triode or saturation. Analyze the circuit to support your assumption. 5.0 V 1K 1K -5.0 V Figure (Q3)

Consider the MOSFET circuit shown in Figure (Q3). Let V, = 2.0 V and K, = 0.4 mA/V?, assume the device is operating in one of two regions, triode or saturation. Analyze the circuit to support your assumption. 5.0 V 1K 1K -5.0 V Figure (Q3)

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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### MOSFET Circuit Analysis Consider the MOSFET circuit shown in Figure (Q3). Let \( V_t = 2.0 \, V \) and \( K_n = 0.4 \, \text{mA/V}^2 \). Assume the device is operating in one of two regions, triode or saturation. Analyze the circuit to support your assumption. #### Diagram Explanation The circuit depicted in Figure (Q3) includes: - A MOSFET with its gate connected to the ground. - A 1 kΩ resistor connected between the drain of the MOSFET and a \( 5.0 \, V \) supply. - A 1 kΩ resistor connected between the source of the MOSFET and a \( -5.0 \, V \) supply. - The drain current \( i_d \) is indicated flowing through the upper resistor. #### Analysis Steps 1. **Determine the Operating Region**: - Evaluate whether the gate-to-source voltage \( V_{gs} \) and the drain-to-source voltage \( V_{ds} \) place the MOSFET in the triode or saturation region. 2. **Equations**: - For the **saturation region**, use: \[ i_d = \frac{K_n}{2} (V_{gs} - V_t)^2 \] - For the **triode region**, use: \[ i_d = K_n [(V_{gs} - V_t)V_{ds} - \frac{V_{ds}^2}{2}] \] 3. **Voltage Calculations**: - Define \( V_{gs} \) as the voltage between the gate and source of the MOSFET. - Define \( V_{ds} \) as the voltage between the drain and source. 4. **Assumption Validation**: - Check consistency of calculated \( i_d \) with \( V_{ds} \) condition of the assumed region. By completing these steps, determine if the MOSFET operates in the triode or saturation region based on the given circuit configuration and parameters.
Transcribed Image Text:### MOSFET Circuit Analysis Consider the MOSFET circuit shown in Figure (Q3). Let \( V_t = 2.0 \, V \) and \( K_n = 0.4 \, \text{mA/V}^2 \). Assume the device is operating in one of two regions, triode or saturation. Analyze the circuit to support your assumption. #### Diagram Explanation The circuit depicted in Figure (Q3) includes: - A MOSFET with its gate connected to the ground. - A 1 kΩ resistor connected between the drain of the MOSFET and a \( 5.0 \, V \) supply. - A 1 kΩ resistor connected between the source of the MOSFET and a \( -5.0 \, V \) supply. - The drain current \( i_d \) is indicated flowing through the upper resistor. #### Analysis Steps 1. **Determine the Operating Region**: - Evaluate whether the gate-to-source voltage \( V_{gs} \) and the drain-to-source voltage \( V_{ds} \) place the MOSFET in the triode or saturation region. 2. **Equations**: - For the **saturation region**, use: \[ i_d = \frac{K_n}{2} (V_{gs} - V_t)^2 \] - For the **triode region**, use: \[ i_d = K_n [(V_{gs} - V_t)V_{ds} - \frac{V_{ds}^2}{2}] \] 3. **Voltage Calculations**: - Define \( V_{gs} \) as the voltage between the gate and source of the MOSFET. - Define \( V_{ds} \) as the voltage between the drain and source. 4. **Assumption Validation**: - Check consistency of calculated \( i_d \) with \( V_{ds} \) condition of the assumed region. By completing these steps, determine if the MOSFET operates in the triode or saturation region based on the given circuit configuration and parameters.
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