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Consider the CMOS SRAM cell in the figure during the read operation. Assume that Q=1, and bit lines are precharged to Vpp/2. Ignore the body effect. VDD=5V O a. 0.55 O b. 0.25 O c. 0.83 M5 O d. 0.72 Oe. 0.13 M₂ Q M₁ M4 M3 MG Bit line B Word line (W) Process parameters: VDD=5V, VTN=-VTp=1V, K₁=120μA/V², Kp=40 μA/V², Cg=50 pF. Calculate the drain current (mA) of M6 immediately following the activation of the word line(W). Choose the closest value. СB

Consider the CMOS SRAM cell in the figure during the read operation. Assume that Q=1, and bit lines are precharged to Vpp/2. Ignore the body effect. VDD=5V O a. 0.55 O b. 0.25 O c. 0.83 M5 O d. 0.72 Oe. 0.13 M₂ Q M₁ M4 M3 MG Bit line B Word line (W) Process parameters: VDD=5V, VTN=-VTp=1V, K₁=120μA/V², Kp=40 μA/V², Cg=50 pF. Calculate the drain current (mA) of M6 immediately following the activation of the word line(W). Choose the closest value. СB

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Consider the CMOS SRAM cell in the figure during the read operation. Assume that Q=1, and bit lines are precharged to VDD/2. Ignore the body effect. VDD=5V R CB O a. 0.55 O b. 0.25 O c. 0.83 O d. 0.72 M₁ O e. 0.13 M₂ M₁ M4 Q M3 Word line (W) Process parameters: VDD=5V, VTN=-VTP=1V, K₁=120µA/V², Kp=40 μA/V², C₂-50 pF. Calculate the drain current (mA) of M6 immediately following the activation of the word line(W). Choose the closest value. M Bit line B CCB
Transcribed Image Text:Consider the CMOS SRAM cell in the figure during the read operation. Assume that Q=1, and bit lines are precharged to VDD/2. Ignore the body effect. VDD=5V R CB O a. 0.55 O b. 0.25 O c. 0.83 O d. 0.72 M₁ O e. 0.13 M₂ M₁ M4 Q M3 Word line (W) Process parameters: VDD=5V, VTN=-VTP=1V, K₁=120µA/V², Kp=40 μA/V², C₂-50 pF. Calculate the drain current (mA) of M6 immediately following the activation of the word line(W). Choose the closest value. M Bit line B CCB
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