Consider the circuit shown below, from the characteristics of the n-channel enhancement MOSFET, suppose it is determined that, in the active region, when VGS = 8V, then ID - 9mA. Furthermore, suppose it is given that Vt = 2V and VGG = 10V. Find the ID current and VDS voltage for the case that RD= 2502 and RD= 1kQ. VDD = +16V RD ID V. VDs VGG Vs
Consider the circuit shown below, from the characteristics of the n-channel enhancement MOSFET, suppose it is determined that, in the active region, when VGS = 8V, then ID - 9mA. Furthermore, suppose it is given that Vt = 2V and VGG = 10V. Find the ID current and VDS voltage for the case that RD= 2502 and RD= 1kQ. VDD = +16V RD ID V. VDs VGG Vs
Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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
Transcribed Image Text:4. Consider the circuit shown below, from the characteristics of the n-channel
enhancement MOSFET, suppose it is determined that, in the active region, when VGS
= 8V, then ID - 9mA. Furthermore, suppose it is given that Vt = 2V and VGG = 10V.
Find the ID current and VDs voltage for the case that RD= 2502 and RD = 1k2.
VDD = +16V
RD
ID
VDs
S
VG
VGs
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