Consider an NPN Silicon BJT which is to be designated with an Emitter Efficiency of ye = 0.995. To maintain a reasonable base resistance, the base is doped with Boron, with NA = 1 x 1016 cm-3. Given that L, = W, = 0.7µm, De = 12cm2s-1, D, = 30cm?s-1 and npo = 1.88 x 10 cm-3. Calculate the n-type doping concentration needed in the emitter.

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Calculate the n-type doping concentration needed in the emitter of a BJT.

 

Consider an NPN Silicon BJT which is to be designated with an Emitter Efficiency of ye = 0.995. To maintain a reasonable base
resistance, the base is doped with Boron, with N = 1 x 1016 cm-3. Given that Le = W, =
0.7µm, De =
12cm?s-1, Dp
30cm?s-1
and npo = 1.88 x 104cm-3. Calculate the n-type doping concentration needed in the emitter.
Transcribed Image Text:Consider an NPN Silicon BJT which is to be designated with an Emitter Efficiency of ye = 0.995. To maintain a reasonable base resistance, the base is doped with Boron, with N = 1 x 1016 cm-3. Given that Le = W, = 0.7µm, De = 12cm?s-1, Dp 30cm?s-1 and npo = 1.88 x 104cm-3. Calculate the n-type doping concentration needed in the emitter.
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