Consider a silicon wafer positioned in a furnace that is zone-heated on the top section and cooled on the lower section. The wafer is placed such that the top and bottom surfaces of the wafer exchange radiation with the hot and cold zones respectively of the furnace. The zone temperatures are Tsur.h = 900 K and Tsur.c = 330 K. The emissivity and thickness of the wafer are ɛ = 0.65 and d = 0.78 mm, respectively. With the ambient gas at T, = 700 K, convection heat transfer coefficients at the upper and lower surfaces of the wafer are 8 and 4 W/m2-K. Find the steady-state temperature of the wafer, in K.

Consider a silicon wafer positioned in a furnace that is zone-heated on the top section and cooled on the lower section. The wafer is placed such that the top and bottom surfaces of the wafer exchange radiation with the hot and cold zones respectively of the furnace. The zone temperatures are Tsur.h = 900 K and Tsur.c = 330 K. The emissivity and thickness of the wafer are ɛ = 0.65 and d = 0.78 mm, respectively. With the ambient gas at T, = 700 K, convection heat transfer coefficients at the upper and lower surfaces of the wafer are 8 and 4 W/m2-K. Find the steady-state temperature of the wafer, in K.

Elements Of Electromagnetics

7th Edition

ISBN:9780190698614

Author:Sadiku, Matthew N. O.

Publisher:Sadiku, Matthew N. O.

ChapterMA: Math Assessment

Section: Chapter Questions

Problem 1.1MA

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Question

Consider a silicon wafer positioned in a furnace that is zone-heated on the top section and cooled on the lower section. The wafer is
placed such that the top and bottom surfaces of the wafer exchange radiation with the hot and cold zones respectively of the furnace.
The zone temperatures are Tsur.h = 900 K and Tsur.c = 330 K. The emissivity and thickness of the wafer are ɛ = 0.65 and d = 0.78
mm, respectively. With the ambient gas at T, = 700 K, convection heat transfer coefficients at the upper and lower surfaces of the
wafer are 8 and 4 W/m2-K. Find the steady-state temperature of the wafer, in K.
Tw
i
K

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