Consider a silicon pn junction with ND = 10¹6 cm ³, N₁ = 10¹8 cm³, and the cross-sectional area A = 104 cm² in equilibrium state. The pn junction is forward biasing at 0.7 V. Assume T = 300 K, Mn = 1110 cm²/V-s, p = 400 cm²/V's, Ln = 10 µm, and Lp = 5 µm. (a) Calculate the diffusion constant of holes on the n region (Dp) and diffusion constant of electrons on the p region (Dn). (b) Calculate the saturation current. (c) Calculate the conducting current at the given forward bias voltage. (d) Calculate the component of current due to hole injection (Ip) and that due to electron injection (In) across the junction.
Consider a silicon pn junction with ND = 10¹6 cm ³, N₁ = 10¹8 cm³, and the cross-sectional area A = 104 cm² in equilibrium state. The pn junction is forward biasing at 0.7 V. Assume T = 300 K, Mn = 1110 cm²/V-s, p = 400 cm²/V's, Ln = 10 µm, and Lp = 5 µm. (a) Calculate the diffusion constant of holes on the n region (Dp) and diffusion constant of electrons on the p region (Dn). (b) Calculate the saturation current. (c) Calculate the conducting current at the given forward bias voltage. (d) Calculate the component of current due to hole injection (Ip) and that due to electron injection (In) across the junction.
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Transcribed Image Text:Consider a silicon pn junction with ND = 10¹6 cm ³, N₁ = 10¹8 cm³, and the cross-sectional area A
= 104 cm² in equilibrium state. The pn junction is forward biasing at 0.7 V. Assume T = 300 K,
Mn = 1110 cm²/V-s, p = 400 cm²/V's, Ln = 10 µm, and Lp = 5 µm.
(a) Calculate the diffusion constant of holes on the n region (Dp) and diffusion constant of
electrons on the p region (Dn).
(b) Calculate the saturation current.
(c) Calculate the conducting current at the given forward bias voltage.
(d) Calculate the component of current due to hole injection (Ip) and that due to electron injection
(In) across the junction.
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