Consider a pure semiconductor material of silicon. At 300 K, the electron concentration in the conduction band is 1016 cm3 and the hole concentration in the valance band is 1017 cm. Assume that the electron and hole concentrations vary as T/2. Calculate the intrinsic carrier concentration in silicon at T = 350 K. Note: energy gap of silicon = 1.12 eV Boltzmann constant = 8.61x10-5 eV/K
Consider a pure semiconductor material of silicon. At 300 K, the electron concentration in the conduction band is 1016 cm3 and the hole concentration in the valance band is 1017 cm. Assume that the electron and hole concentrations vary as T/2. Calculate the intrinsic carrier concentration in silicon at T = 350 K. Note: energy gap of silicon = 1.12 eV Boltzmann constant = 8.61x10-5 eV/K
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Transcribed Image Text:Consider a pure semiconductor material of silicon. At 300 K, the electron concentration in the
conduction band is 1016 cm3 and the hole concentration in the valance band is
1017 cm3. Assume that the electron and hole concentrations vary as T/2.
Calculate the intrinsic carrier concentration in silicon at T = 350 K.
Note: energy gap of silicon = 1.12 eV
Boltzmann constant = 8.61x10-5 eV/K
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