Consider a gallium arsenide Hall device at T 300K. A Hall effect device has been fabricated with the following geometry: d = 0.01 cm, W = 0.05 cm, L = 0.5 cm. The measured current is 2.5 mA, and the applied voltage is 2.2 V. The magnitude of the magnetic field (pointing along the thickness direction) is |B| = 0.025 T, and the hall voltage is measured to be AVH = -4.5 mV. Find: (a) The semiconductor type (n or p-type) (b) The majority carrier concentration (c) The majority carrier mobility
Consider a gallium arsenide Hall device at T 300K. A Hall effect device has been fabricated with the following geometry: d = 0.01 cm, W = 0.05 cm, L = 0.5 cm. The measured current is 2.5 mA, and the applied voltage is 2.2 V. The magnitude of the magnetic field (pointing along the thickness direction) is |B| = 0.025 T, and the hall voltage is measured to be AVH = -4.5 mV. Find: (a) The semiconductor type (n or p-type) (b) The majority carrier concentration (c) The majority carrier mobility
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Consider a gallium arsenide Hall device at T =
300K. A Hall effect device has been fabricated with the following geometry: d = 0.01
cm, W = 0.05 cm, L = 0.5 cm. The measured current is 2.5 mA, and the applied
voltage is 2.2 V. The magnitude of the magnetic field (pointing along the thickness
direction) is B = 0.025 T, and the hall voltage is measured to be AVH = -4.5 mV.
Find:
(a) The semiconductor type (n or p-type)
(b) The majority carrier concentration
(c) The majority carrier mobility
(d) The resistivity of the sample.
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