Consider a bar of p-type silicon that is uniformly doped to a value of N₂ = 2 × 10¹6 cm-3 at T = 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at x = 0 is Sp(0) = n(0) = 2 x 10¹4 cm-³. Assume the following parameters: n = 1200 cm² /V-s, p = 400 cm² /V-S, Tno = 10-6 s, and Tpo = 5 x 10-7 s. Neglecting surface effects, (a) determine the steady-state excess electron and hole concentrations as a function of distance into the semiconductor, and (b) calculate the steady-state electron and hole diffusion current densities as a function of distance into the semiconductor.
Consider a bar of p-type silicon that is uniformly doped to a value of N₂ = 2 × 10¹6 cm-3 at T = 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at x = 0 is Sp(0) = n(0) = 2 x 10¹4 cm-³. Assume the following parameters: n = 1200 cm² /V-s, p = 400 cm² /V-S, Tno = 10-6 s, and Tpo = 5 x 10-7 s. Neglecting surface effects, (a) determine the steady-state excess electron and hole concentrations as a function of distance into the semiconductor, and (b) calculate the steady-state electron and hole diffusion current densities as a function of distance into the semiconductor.
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Transcribed Image Text:Question 7
Consider a bar of p-type silicon that is uniformly doped to a value of N₁ = 2 × 10¹6 cm-³
at T = 300 K. The applied electric field is zero. A light source is incident on the end of
the semiconductor as shown in Figure P6.19. The steady-state concentration of excess
carriers generated at x = 0 is Sp(0) = 8n(0) = 2 x 1014 cm-3. Assume the following
parameters: n = 1200 cm² /V-s, p = 400 cm² /V-S, Tho = 10-6 s, and Tpo = 5 x 10-7 s.
Neglecting surface effects, (a) determine the steady-state excess electron and hole
concentrations as a function of distance into the semiconductor, and (b) calculate the
steady-state electron and hole diffusion current densities as a function of distance into
the semiconductor.
Light
x = 0
p type
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