Consider a bar of n-type silicon that is uniformly doped to a value of Nd 1 x 1017 cm-3 at T= 300 K. Without an applied electric field, light is incident on %| the end of the semiconductor (shown in the figure below). Light is totally absorbed at the edge of the semiconductor (x=0), and as a result, no light enters inside the semiconductor (x>0). The light generates excess carriers at x=0: Sp(0) = &n(0) = 1 × 1015 cm-3, at steady state. Determine the steady-state excess hole and electron concentrations as a function of distance into the semiconductor. Calculate the steady-state electron and hole diffusion current densities as a function of distance into the semiconductor. Parameters: Hn=1200 cm²/V-s, µp=400 cm²/V-s, tno=10-6 s, Tpo=5×107 s. Neglect surface effects.
Consider a bar of n-type silicon that is uniformly doped to a value of Nd 1 x 1017 cm-3 at T= 300 K. Without an applied electric field, light is incident on %| the end of the semiconductor (shown in the figure below). Light is totally absorbed at the edge of the semiconductor (x=0), and as a result, no light enters inside the semiconductor (x>0). The light generates excess carriers at x=0: Sp(0) = &n(0) = 1 × 1015 cm-3, at steady state. Determine the steady-state excess hole and electron concentrations as a function of distance into the semiconductor. Calculate the steady-state electron and hole diffusion current densities as a function of distance into the semiconductor. Parameters: Hn=1200 cm²/V-s, µp=400 cm²/V-s, tno=10-6 s, Tpo=5×107 s. Neglect surface effects.
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