please see attached... Consider a bar of n-type silicon that is uniformly doped to a value of Na =1 x 1017 cm-3 at T= 300 K. Without an applied electric field, light is incident onthe end of the semiconductor (shown in the figure below). Light is totallyabsorbed at the edge of the semiconductor (x=0), and as a result, no light entersinside the semiconductor (x>0). The light generates excess carriers at x=0:Sp(0) = ôn(0) = 1 × 1015 cm¯3, at steady state.Determine the steady-state excess hole and electron concentrations as afunction of distance into the semiconductor.OCalculate the steady-state electron and hole diffusion current densities as afunction of distance into the semiconductor.Parameters: Hn=1200 cm?/V-s, Hp=400 cm?/V-s, Tno=10° s, tpo=5×107 s. Neglectsurface effects.Lightn-type

Given that, Nd=1×107 cm-3 T=300K δp(0)=δn(0)=1×1015 cm-3…

Consider a bar of n-type silicon that is uniformly doped to a value of Nd 1 x 1017 cm-3 at T= 300 K. Without an applied electric field, light is incident on %| the end of the semiconductor (shown in the figure below). Light is totally absorbed at the edge of the semiconductor (x=0), and as a result, no light enters inside the semiconductor (x>0). The light generates excess carriers at x=0: Sp(0) = &n(0) = 1 × 1015 cm-3, at steady state. Determine the steady-state excess hole and electron concentrations as a function of distance into the semiconductor. Calculate the steady-state electron and hole diffusion current densities as a function of distance into the semiconductor. Parameters: Hn=1200 cm²/V-s, µp=400 cm²/V-s, tno=10-6 s, Tpo=5×107 s. Neglect surface effects.

Consider a bar of n-type silicon that is uniformly doped to a value of Nd 1 x 1017 cm-3 at T= 300 K. Without an applied electric field, light is incident on %| the end of the semiconductor (shown in the figure below). Light is totally absorbed at the edge of the semiconductor (x=0), and as a result, no light enters inside the semiconductor (x>0). The light generates excess carriers at x=0: Sp(0) = &n(0) = 1 × 1015 cm-3, at steady state. Determine the steady-state excess hole and electron concentrations as a function of distance into the semiconductor. Calculate the steady-state electron and hole diffusion current densities as a function of distance into the semiconductor. Parameters: Hn=1200 cm²/V-s, µp=400 cm²/V-s, tno=10-6 s, Tpo=5×107 s. Neglect surface effects.