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concentration, n rent le

concentration, n rent le

Structural Analysis
Structural Analysis
6th Edition
ISBN:9781337630931
Author:KASSIMALI, Aslam.
Publisher:KASSIMALI, Aslam.
Chapter2: Loads On Structures
Section: Chapter Questions
Problem 1P
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A Ge pn junction is doped with acceptor doping of 105 cm and donor doping of 10 cm Assuming that: Area = 0.01 cm?, Lp = L, =10 um, D, = 50 cm/s, and D,= 100 cm/s, Find at room temperature (300 K): a) Intrinsic carrier concentration, n b) Built in potential. c) The saturation current Is. 1. ) Results of measurements of the diode current and the corresponding diode voltage showed that I=10 A at V-800 mV. Estimate Is, and the diode voltage at 10 I and /10 for this junction diode. 2.
Transcribed Image Text:A Ge pn junction is doped with acceptor doping of 105 cm and donor doping of 10 cm Assuming that: Area = 0.01 cm?, Lp = L, =10 um, D, = 50 cm/s, and D,= 100 cm/s, Find at room temperature (300 K): a) Intrinsic carrier concentration, n b) Built in potential. c) The saturation current Is. 1. ) Results of measurements of the diode current and the corresponding diode voltage showed that I=10 A at V-800 mV. Estimate Is, and the diode voltage at 10 I and /10 for this junction diode. 2.
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