A gate oxide is grown in 640 torr of water vapour at 1050o C. The oxide is grown on a bare (100) silicon wafer. The oxidation time is 2 mins. i) Assuming the tau (τ) value is zero, use the Deal–Grove model to predict the oxide thickness. Do not use design curves. For simplicity, when estimating B and B/A, assume the values are a linear function of temperature, rather than the actual exponential function. ii) When this process is run, the measured oxide thickness is 0.1 µm, but the oxidation rate after 2 mins agrees with the B/A ratio. Find the value of τ that should be used for these process conditions to allow for the initial rapid growth regime
A gate oxide is grown in 640 torr of water vapour at 1050o C. The oxide is grown on a bare (100) silicon wafer. The oxidation time is 2 mins. i) Assuming the tau (τ) value is zero, use the Deal–Grove model to predict the oxide thickness. Do not use design curves. For simplicity, when estimating B and B/A, assume the values are a linear function of temperature, rather than the actual exponential function. ii) When this process is run, the measured oxide thickness is 0.1 µm, but the oxidation rate after 2 mins agrees with the B/A ratio. Find the value of τ that should be used for these process conditions to allow for the initial rapid growth regime
Chapter2: Loads On Structures
Section: Chapter Questions
Problem 1P
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A gate oxide is grown in 640 torr of water vapour at 1050o C. The oxide is grown on a
bare (100) silicon wafer. The oxidation time is 2 mins.
i) Assuming the tau (τ) value is zero, use the Deal–Grove model to predict the oxide
thickness. Do not use design curves. For simplicity, when estimating B and B/A,
assume the values are a linear function of temperature, rather than the actual
exponential function.
ii) When this process is run, the measured oxide thickness is 0.1 µm, but the
oxidation rate after 2 mins agrees with the B/A ratio. Find the value of τ that
should be used for these process conditions to allow for the initial rapid growth
regime
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