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Calculate the contact potential with this forward bias and the total depletio layer thickness. How much does the depletion layer thickness extend into eac

Calculate the contact potential with this forward bias and the total depletio layer thickness. How much does the depletion layer thickness extend into eac

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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Apply a forward voltage of 0.6 V to the pn junction. i) Calculate the contact potential with this forward bias and the total depletion layer thickness. How much does the depletion layer thickness extend into each region?
Transcribed Image Text:Apply a forward voltage of 0.6 V to the pn junction. i) Calculate the contact potential with this forward bias and the total depletion layer thickness. How much does the depletion layer thickness extend into each region?
Consider a pn junction diode at 300 K in which the p doping density is 1024 m²³ while the n doping density is 1022 m³. The thickness of the p-doped region is 10 µm while the thickness of the n-doped region is 20 μm and the cross-sectional area of the diode is 2 μm². Take kT=0.025 V, KT/q-0.025 eV, the intrinsic carrier concentration ni to be 1.5x10¹6 m³ at 300K, the diffusion constant for the electrons De to be 0.0038 m²/s and the diffusion constant for the holes Dh to be 0.0012 m²/s.
Transcribed Image Text:Consider a pn junction diode at 300 K in which the p doping density is 1024 m²³ while the n doping density is 1022 m³. The thickness of the p-doped region is 10 µm while the thickness of the n-doped region is 20 μm and the cross-sectional area of the diode is 2 μm². Take kT=0.025 V, KT/q-0.025 eV, the intrinsic carrier concentration ni to be 1.5x10¹6 m³ at 300K, the diffusion constant for the electrons De to be 0.0038 m²/s and the diffusion constant for the holes Dh to be 0.0012 m²/s.
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