Apply a forward voltage of 0.6 V to the pn junction.i)Calculate the contact potential with this forward bias and the total depletionlayer thickness. How much does the depletion layer thickness extend into eachregion? Consider a pn junction diode at 300 K in which the p doping density is 1024 m²³ whilethe n doping density is 1022 m³. The thickness of the p-doped region is 10 µm whilethe thickness of the n-doped region is 20 μm and the cross-sectional area of the diodeis 2 μm². Take kT=0.025 V, KT/q-0.025 eV, the intrinsic carrier concentration ni to be1.5x10¹6 m³ at 300K, the diffusion constant for the electrons De to be 0.0038 m²/s andthe diffusion constant for the holes Dh to be 0.0012 m²/s.

Given data is shown below. NA=1024m-3ND=1022m-3Wp=10μmWn=20μmVT=kTq=25mVηi=1.5×1016 m-3Dn=0.0038…

Answered: Calculate the contact potential with…

Calculate the contact potential with this forward bias and the total depletio layer thickness. How much does the depletion layer thickness extend into eac

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Concept explainers

Types of Charge Carriers

A carrier is a type of object which carries a particular thing from one point to another point. For instance, people use different vehicles from one place to another, and the vehicle carries those people and acts as a carrier.

Question

Apply a forward voltage of 0.6 V to the pn junction.
i)
Calculate the contact potential with this forward bias and the total depletion
layer thickness. How much does the depletion layer thickness extend into each
region?

Consider a pn junction diode at 300 K in which the p doping density is 1024 m²³ while
the n doping density is 1022 m³. The thickness of the p-doped region is 10 µm while
the thickness of the n-doped region is 20 μm and the cross-sectional area of the diode
is 2 μm². Take kT=0.025 V, KT/q-0.025 eV, the intrinsic carrier concentration ni to be
1.5x10¹6 m³ at 300K, the diffusion constant for the electrons De to be 0.0038 m²/s and
the diffusion constant for the holes Dh to be 0.0012 m²/s.

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