- (Based on Neaman Problem 5.49). Hall effect device is fabricated from silicon at 300K. The geometry of the device is as follows: d = 0.005 cm, W = 0.05 cm, and L = 0.5 cm. The electrical measured current I 0.50 mA, the applied voltage AV 1.25 V, and the magnetic field (pointing along the thickness direction) has magnitude |B| = 0.065 T. The Hall field has magnitude |EH| = 16.5mV/cm, and it points in the negative y-direction. Determine:

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Chapter1: Units, Trigonometry. And Vectors
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Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...
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(d) The majority carrier mobility
Transcribed Image Text:(d) The majority carrier mobility
5.) (Based on Neaman - Problem 5.49). A Hall effect device is fabricated from silicon
at 300K. The geometry of the device is as follows: d = 0.005 cm, W = 0.05 cm,
and L = 0.5 cm. The electrical measured current I = 0.50 mA, the applied voltage
AV = 1.25 V, and the magnetic field (pointing along the thickness direction) has
magnitude |B| = 0.065 T. The Hall field has magnitude |Ēµ| = 16.5mV/cm, and it
points in the negative y-direction. Determine:
Transcribed Image Text:5.) (Based on Neaman - Problem 5.49). A Hall effect device is fabricated from silicon at 300K. The geometry of the device is as follows: d = 0.005 cm, W = 0.05 cm, and L = 0.5 cm. The electrical measured current I = 0.50 mA, the applied voltage AV = 1.25 V, and the magnetic field (pointing along the thickness direction) has magnitude |B| = 0.065 T. The Hall field has magnitude |Ēµ| = 16.5mV/cm, and it points in the negative y-direction. Determine:
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