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b. Find the operating point (ID, VDs) for the MOSFET. Again, first assume a region of operation, then determine the operating point, then check to make sure the assumption was correct. Now assume that K₂ decreases by 20% to 20μA/V², what is the effect on the operating point (IDS, VDS)? C.

b. Find the operating point (ID, VDs) for the MOSFET. Again, first assume a region of operation, then determine the operating point, then check to make sure the assumption was correct. Now assume that K₂ decreases by 20% to 20μA/V², what is the effect on the operating point (IDS, VDS)? C.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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5. The problem with the simple biasing circuit in problem 4 is that it's very sensitive to variations in the transistor parameters. The bias circuit shown below is an improved design with less sensitivity to variations in transistor parameters. Assume Kn = 25μA/V², VTN =1V. R2 31.5ΜΩ VEQ C. G Ro 375 ΚΩ REQ R, 31ΜΩ R, 3 39 ΚΩ M1 a. Re-draw the gate biasing circuit with its Thevenin equivalent just like in problem 4(a), what are VEQ and REQ? G Ro 375 ΚΩ S R₂ M1 + 39 ΚΩ VDD = 10V + VDD = 10V b. Find the operating point (ID, Vòs) for the MOSFET. Again, first assume a region of operation, then determine the operating point, then check to make sure the assumption was correct. Now assume that K₁ decreases by 20% to 20µA/V², what is the effect on the operating point (IDS, VDS)?
Transcribed Image Text:5. The problem with the simple biasing circuit in problem 4 is that it's very sensitive to variations in the transistor parameters. The bias circuit shown below is an improved design with less sensitivity to variations in transistor parameters. Assume Kn = 25μA/V², VTN =1V. R2 31.5ΜΩ VEQ C. G Ro 375 ΚΩ REQ R, 31ΜΩ R, 3 39 ΚΩ M1 a. Re-draw the gate biasing circuit with its Thevenin equivalent just like in problem 4(a), what are VEQ and REQ? G Ro 375 ΚΩ S R₂ M1 + 39 ΚΩ VDD = 10V + VDD = 10V b. Find the operating point (ID, Vòs) for the MOSFET. Again, first assume a region of operation, then determine the operating point, then check to make sure the assumption was correct. Now assume that K₁ decreases by 20% to 20µA/V², what is the effect on the operating point (IDS, VDS)?
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