The measured data of an enhancement-type MOSFET at room temperature isgiven in Table Q2. The MOSFET has the following parameters:(b)Width to length ratio WIL= 5.0Oxide thickness tor = 300 x 10 cmFermi potential Op = -0.3 V(i)Determine the type of MOSFET.(ii)Find the threshold voltage Vro.(iii)Determine the channel length modulation 2.(iv)Estimate the mobility of the carrier µn.(v)Calculate the body effect coefficient y.(vi)Given the width W = 0.45 µm. Find the feature size.Table Q2Vcs/VVDs /VVSB / VIp/uA2105540055328058480 The measured data of an enhancement-type MOSFET at room temperature isgiven in Table Q2. The MOSFET has the following parameters:(b)Width to length ratio WIL= 5.0Oxide thickness tor = 300 x 10 cmFermi potential Op = -0.3 V(i)Determine the type of MOSFET.(ii)Find the threshold voltage Vro.(iii)Determine the channel length modulation 2.(iv)Estimate the mobility of the carrier µn.(v)Calculate the body effect coefficient y.(vi)Given the width W = 0.45 µm. Find the feature size.Table Q2Vcs/VVDs /VVSB / VIp/uA2105540055328058480

b) The measured data of an enhancement-type MOSFET at room temperature is given in Table Q2. The MOSFET has the following parameters: Width to length ratio W/L= 5.0 Oxide thickness tor = 300 x 10 cm Fermi potential øp= -0.3 V (i) Determine the type of MOSFET. (ii) Find the threshold voltage Vro- (iii) Determine the channel length modulation 2.

b) The measured data of an enhancement-type MOSFET at room temperature is given in Table Q2. The MOSFET has the following parameters: Width to length ratio W/L= 5.0 Oxide thickness tor = 300 x 10 cm Fermi potential øp= -0.3 V (i) Determine the type of MOSFET. (ii) Find the threshold voltage Vro- (iii) Determine the channel length modulation 2.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Question

The measured data of an enhancement-type MOSFET at room temperature is
given in Table Q2. The MOSFET has the following parameters:
(b)
Width to length ratio WIL= 5.0
Oxide thickness tor = 300 x 10 cm
Fermi potential Op = -0.3 V
(i)
Determine the type of MOSFET.
(ii)
Find the threshold voltage Vro.
(iii)
Determine the channel length modulation 2.
(iv)
Estimate the mobility of the carrier µn.
(v)
Calculate the body effect coefficient y.
(vi)
Given the width W = 0.45 µm. Find the feature size.
Table Q2
Vcs/V
VDs /V
VSB / V
Ip/uA
2
10
5
5
400
5
5
3
280
5
8
480

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