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(b) For the circuit shown in Figure Fig. 2(b). the MOSFET parameters are: VTN = 1.2 V, K, = 0.25 mA/V² and 2 = 0. (1i) Design the circuit such that Ipg = 0.5 mA and Voso = 3.0 V (ii) Determine the small-signal voltage gain A, = vo/vi 2V Rp Ccz R = 10kn RG= 200 kn Rs Cs - 10V Fig. 2(b) ww ww ww

(b) For the circuit shown in Figure Fig. 2(b). the MOSFET parameters are: VTN = 1.2 V, K, = 0.25 mA/V² and 2 = 0. (1i) Design the circuit such that Ipg = 0.5 mA and Voso = 3.0 V (ii) Determine the small-signal voltage gain A, = vo/vi 2V Rp Ccz R = 10kn RG= 200 kn Rs Cs - 10V Fig. 2(b) ww ww ww

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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(b) For the circuit shown in Figure Fig. 2(b), the MOSFET parameters are: VTN = 1.2 V, K, = 0.25 mA/V² and 2 = 0. (i) Design the circuit such that Ipg = 0.5 mA and Voso = 3.0 V (ii) Determine the small-signal voltage gain A, = vo/vi -2V Rp Ccz oa + 어 Ca R= 10kn Re= 200kn Rs - 10V Fig. 2(b)
Transcribed Image Text:(b) For the circuit shown in Figure Fig. 2(b), the MOSFET parameters are: VTN = 1.2 V, K, = 0.25 mA/V² and 2 = 0. (i) Design the circuit such that Ipg = 0.5 mA and Voso = 3.0 V (ii) Determine the small-signal voltage gain A, = vo/vi -2V Rp Ccz oa + 어 Ca R= 10kn Re= 200kn Rs - 10V Fig. 2(b)
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