B Consider the circuit shown in Figure below with transistor parameters ß 120 and VA=00. (a) Determine the small-signal parameters gm, I, and I for both transistors. (b) Plot the dc and ac load lines for both transistors. (c) Determine the overall small-signal voltage gain Av = vo/vs. (d) Determine the input resistance R₁, and the output resistance R.. (e) Determine the maximum Vcc=+12 V undistorted swing in the output voltage.

B Consider the circuit shown in Figure below with transistor parameters ß 120 and VA=00. (a) Determine the small-signal parameters gm, I, and I for both transistors. (b) Plot the dc and ac load lines for both transistors. (c) Determine the overall small-signal voltage gain Av = vo/vs. (d) Determine the input resistance R₁, and the output resistance R.. (e) Determine the maximum Vcc=+12 V undistorted swing in the output voltage.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

VcC R2 RC- RI RL R1 RE VEE Assume: B=100, VA=150, Vcc=12V, VɛE=GND, R=2K, R1=160K, R2=300K, Rɛ=3K, Rc=2.2K, and R1=100K. A.)For the circuit draw the AC equivalent circuit (including the small signal model for the transistor). Then compute r„, ľo, and gm. Then compute Av (the gain for the entire circuit), and Rin (for the whole circuit). B.)Convert the circuit to a common-collector circuit. Draw the new circuit (assume the same values for the input and load resistances). Then compute the terminal voltage gain, and Rin (for the whole circuit), re-computing any parameters that you need to solve.
In this voltage divider bias circuit, the input is at the base. Output is at the emitter with a high input resistance and low output resistance. The maximum voltage gain is 1 and the coupling capacitors must have a negligible reactance at the frequency of operation. (use to answer a and b) a. Derive the expression for the voltage gain, current gain, and power gain in terms of power delivered to the load, R. b. Sketch both the DC and AC equivalent circuits. c. Derive the expression for ripple factor of Half Wave Rectification with a capacitor filter.
ASAP
A. For the configuration shown below in 4(A), find the small signal voltage gain (Voutp-Voutm)/Vin B. For the configuration shown in 4(B), find the following parameters (a) DC value of output voltage, (b) input common mode range and (c) small signal voltage gain when all transistors are in saturation vou/Vin as indicated in the diagram; Assume no body bias on M1 ad M2 For this problem ONLY, assume the following device parameters V7, = \V| = 0.5V;K, = k ,' = 100 µA / V²,a, = a, = 0.01 VDD = 3V (10/1) M, M. (10/1) (10/1) M, |M, (10/1) Voutp 20kΩ м, (200/1) м, м, (10/1) м, Vin (1/1) м, M. (10/1) + Vin DC VAN M, 100HA (1/1) M, M, (10/1) (A) (B) V. =-1V
2. Determine the VCB (i.e., voltage difference between collector C and base B) in the transistor circuit shown in the figure below. The transistor is silicon type (i.e., VBE is 0.7V) and has current gain hEE- 150. (Assume the transistor is working on active region) Rc 100 2 RB 10V Vcc 10 k2 VBR = 5V
2. The parameters of the transistor as shown in the figure below are ß = 100 and VA = 100V. a. Find the dc voltages at the base and emitter terminals. b. Find Rc such that VCEQ = 3.5V. c. Assuming Cc and CE act as short circuits, determine the small-signal voltage gain Av = Vo/Vs. d. Repeat part (c) if a 5000 source resistor is in series with the vs signal source. V+ = +5 V Rs = 100 £2 www Us Cc RB = 10 ΚΩ I= Iausmi 0.35 mA www RC -000 V=-5 V CE
This problem is AC analysis problem. DC analysis is not needed to answer the question. A) Convert this bias circuit into a bypassed common source amplifier that has an output across a load resistor (RL). To do this you should draw three capacitors on the figure below, an input voltage source, and any resistors you think that should be added. B) In the space below the figure, Draw the hybrid n model for this amplifier circuit including all voltages and resistors. Label Vi, Vgs, and vo on the model. Assume the capacitors you add act as short circuits at AC. Be sure to include resistors R1, R2, R3, R4, and RL in the hybrid pi model. > When you "verify" a mode of operation you will need to calculate all three voltages (Vc, V8, VE for BJTS and VG, Vs, Vo for MOSFETS) and show the correct two conditions are satisfied. > Assume Capacitors acts like open circuits at DC and short circuits for AC. > Assume the following: o Beta = 100 O VBE = 0.7 12V o V (Thermal) = 26 mV o V (Threshold) = 2V O…
Determine small signal voltage gain if VCEQ = 4.5 V. Transistor parameters (NMOS): k,= 100 µA/V² , VTN=1 V, and 1 = 0.01 V. Transistor parameters (BJT): B = 100 , VBE(on)= 0.7 V, and VA = 00 . 10V 8V Vo VIN
Design a voltage divider biased CE stage with emitter degeneration. That stage should support a voltage gain of 5 and an input impedance larger than 3 KOhms with a bias current of 0.5 mA. Assume Beta=100, Is = 5e-17. Neglect the early voltage effect. You also need to provide values for the operating point of this transistor. Find the output resistance of this stage if the early voltage = 20 V.
4. A Darlington transistor is essentially an array of two transistors connected as shown below. Assume both transistors follow our simple model with a current gain of B=100. Determine the maximum value of R2 that will just saturate the transistors, and pass full current through the load resistance R1. v2 V2 R2 PULSE (0 5 0) Q2 NPN R1 10 Q1 NPN V1 24
2) Consider an enhancement MOSFET common source amplifier circuit in Figure 2(a). The output characteristic is showed in Figure 2(b). Assume that the circuit is operating in the saturation region and k = 5 mA/V2. It also given that ra = ro = 00, Cgd = 2 pF, Cgs = 4 pF, Cas = 1 pF, Cwi = 4 pF and Cwo = 3pF. a. Using DC load line, prove that Ino = 22.5 mA and VpsQ = 5.5 V for Vaso = 2.5V. (Please attach the characteristic graph provided in your working solution) b. Draw the AC equivalent circuit at mid frequency. c. Estimate the voltage gain Av = Vo /Vi. d. Determine the dominant high cut – off frequency for the circuit. 10 V Rp 100 2 6 MQ C2 ci Rs RL Vo 1002 R: 5002 Rs Vo 14 MQ Cs 100 2 Vs Figure 2(a) 60- 50 30 20 10 9. 10 Figure 2(b) (yu) 4
For the p-channel JFET circuit in the Figure, the transistor parameters are: /oss = 2 mA, Vp = |1.75| V. (a) Determine Ipo and Vspo- (b) Give the small signal model (c) Determine the small-signal voltage gains Av = vo/vi QUESTION I: For the p-channel JFET circuit in the Figure, the transistor parameters are: Ioss = 2 mA, Vp = |1.75| V. (a) Determine Ipo and Vspo- (b) Give the small signal model (c) Determine the small-signal voltage gains Av = vo/vi VDD = 10 V Rg = 5 k£2 R1 = 90 kQ %3D Cc2 RL = 10 k2 R2 = 110 k2 ww