A transistor amplifier which uses a npn BJT and various passive components is shown in figure Q1. A table of components values is shown in Table Q1. For this amplifier: a) Calculate the following dc voltages and currents; V8, VE, le and le. b) Draw ar parameter ac small-signal model. The model should be correctly labelled with transistor voltages and all small-signal parameters. Detail assumptions and limitations. c) Calculate the small-signal input resistance Rin, output resistance Rout and output voltage Vout. Detail assumptions and limitations. d) Calculate the small-signal voltage and current gain Av and A. Also calculate the output voltage. Vcc Rs R V R R: Figure Q1 R1= 40 kQ Vcc = 10 V R3 = 2 kQ Vin = 10 mV Table of Component values and Transistor Parameters R2 = 10 kQ VT = 24 mV R4 = 1 kQ B = 200 VBE = 0.7 V C=2mF

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BJT (Bipolar Junction Transistor)

A BJT is a semiconductor device with 3 terminals that consist of a p-n junction diode that can amplify the signal or current. It is a current-controlled device. The three BJT terminals are base, collector, and emitter. The BJT works with the charge carrier, the two type of carriers in the BJT are holes and electrons, the charge carriers flow by the process of recombination. The signal to be amplifier is generally given as the input at the base terminal and an amplified form of it is available at the collector terminal.