at a pressure of 3 tom electrodes 5 cm apart.
Q: a. V, E, and D at p = 20 mm
A: Hello. Since your question has multiple sub-parts, we will solve the first sub-part (which has three…
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Q: Copper wire gas resistivity density=1.7x10^-8 omega•m what at 20 degrees X and it has a temps tire…
A: The resistivity of the copper is given as, ρ=1.7×10-8 Ω, At 20oC, the temperature coefficient is…
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Q: In a semiconductor it is observed that 0.75 of the current is carried by holes and O.25 by…
A: Ih = 0.75 I Ie = 0.25 I Ve = 3 Vh
Q: 6. The only metal that is a liquid at room temperature is O Copper O Silver O Mercury O Sodium
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Q: Q3/Find the temperature at which an electron above a Fermi level by 0.3ev is 15%
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Q: The base of an electric iron is brightly polished mainly so that ........ ?
A: An electric iron, converts Electrical energy to Heat energy.
Q: 1 (a) Using Townsend's second ionization criterion, consider Io = 4 x 10-7 A. Consider a = 2.28/cm.…
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Q: Volume charge density within the operating region of a parallel-plate vacuum diode is given by p =…
A: Given data: The volume charge density is ρ=-49ε0V0d-4/3x-2/3. The values of constant are, V0=40 Vd=1…
Q: 503 W when the applied potential difference is 110 V and the wire temperature is 800°C. What would…
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Q: s given below, since they are taker ection of i_c, I_B and i_e currents
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Q: Given that { 12p nC/m³, Pv (0, 1<p< 2 otherwise Determine D everywhere.
A: we have to find out Vector D by the help of given Rho v.
Q: 4. Compute the linear attenuation coefficient of iron oxide (Fe304) at 1 MeV. Use the figures…
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Q: A charge distribution with spherical symmetry has density = [' Pv Po₂ 0, 0≤r≤R r> R Calculate energy…
A: Given a change density. We know that for spherical symmetry dv= 4πr2.dr
Q: 2. Find the charge stored when 5.5 V is applied to an capacitor. 8 pF
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Q: 26.2) Estimate the total food energy needed for the planet's population assuming a diet of 2400…
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Q: A copper phone wire has essentially no snag between poles 35m apart on a winter day when the…
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Q: If 2.5 A flows through R2, what is e?
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Q: Q: The electron density increase along the x– axis as given (n=100+10®x+4 + 10“x² ) if diffusion…
A: The diffusion current can be said to be due to the movement caused by variation in carrier…
Q: 50 V 49.7 mA 49.3 mA OOA R₁ = 1kQ w 25 mA A Figure 16-1 What is the current through R1 in Figure…
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Q: Can Silver (E°red = +0.800 V) be used as a sacrificial anode for iron surfaces (E°red = –0.440 V)?
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Q: Metals are bonded by metallic bond, that is protons in a sea of electrons which give them their…
A: given data :
Q: A resistor in the form of a carbon cylinder is connected to the voltage source. As the temperature…
A: In case of carbon, temperature coefficient of carbon is negative.This concludes that the resistance…
Q: The diode shown in the circuit is a silicon diode. The potential difference between the points A and…
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Q: b) Given E = 20 sin(10°t - Bz) â,V/m . Determine H %3D
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Q: If the diode opens in Figure 16-1(b), the voltage across the diode is Figure 16-1 OOV 0.7 V 01v 4.3…
A: This question is from diodes chapter
Q: Aluminum has 62% of copper conductivity but is just 30% the weight of copper. Show that this means…
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Q: Match the following terms to the behavior of a conductor, semi conductor, or insulator. You will use…
A: We know that conductor = lots of conducting charge semi conductor = moderate conducting charge…
Q: 20 V 50 V 10 mA 8.6 mA 9.4 mA R₁ - 5000 OOA (a) R₁ = 1 k W alıt A B 1 V R₁ - 5000 ww R₂-1 kQ2 Figure…
A: 16-1(b)Voltage, V= 1 VResistance, R1=500 The diode is made of siliconWe have to determine the…
Q: (i) The free electron and hole volume charge density [Electron bebas dan isipadu ketumpatan cas…
A: In the following problem for the vacuum tube of semiconductor, σ=2.2 S/m Radius, r=5 mm Length, l=10…
Q: d) Design the channel length of a transistor so that 7 out of every 8 electrons reach the drain…
A: To design the channel length of a transistor so that out of every electrons reach the drain…
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Q: Conduc-Thor-s. Thor has two square prism conductors that are made of the same ohmic material and…
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Q: 50 V- 49.7 mA 49.3 mA COA R₁ - 1kQ www Figure 16-1 What is the current through R1 in Figure 16-1(c)…
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Q: rature of the ho For Cn : a =-
A: Given as, Cu⇒a=0.6mv,b=0.008mvkCn⇒a=-20mv,b=-0.056mvk
Q: A type S thermocouple uses a 0 degree C reference junction. What voltage (in mV) will be generated…
A: Given : S type thermocouple Reference temperature is 0oC. Junction temperature is 1272oC.
Q: Estimate the pressure of an ideal Fermi-Dirac gas of electrons at 0°K
A: Given: The equation of the pressure of the ideal Fermi-Dirac gas at the temperature of 0 K.
Q: + 12 V
A: Common emitter current gain=100 The biasing is feedback bias or collector bias.
Q: Would you anticipate superconductivity from a material with little or no crystal structure (a…
A: Amorphous materials are those that have no fixed crystal structure. Amorphous film materials can be…
Q: An abrupt uniformly doped silicon pn junction is reversed biased by Vg= 20 V. If Na(in n-side)=10"…
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Q: An immersion heater utilizing 120 V is used to raise the temperature of a 100 g aluminum cup…
A: Total energy supplied by heater is as follows: Et=E1+E2+E3+E4…
Q: .Express (a) the energy required to break one bond in DNA (10-20 J) in eV. (b) the kinetic energy of…
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Q: Substance I n = 1.33 Substance II n = 1.50 Substance III n = 1.00
A: Total internal reflection is when refractive angle becomes greater than 90° So for nearest angle of…
Q: Consider a conductor. If one of the terminals is subject to a higher potential while the other…
A: The conduction flow is from higher potential to lower potential.
Q: A 12 V battery with internal resistance 0.5 Ω is connected in series with two 3 Ωresistors connected…
A:
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