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At 300 K, minority carriers (holes) are injected into a homogeneous n-type semiconductor sample at one point. An applied field of 50 V/cm is applied across the sample, and the field moves these minority carriers a distance of 1 cm in 100μs. Find the drift velocity and the diffusivity of the minority carriers.

At 300 K, minority carriers (holes) are injected into a homogeneous n-type semiconductor sample at one point. An applied field of 50 V/cm is applied across the sample, and the field moves these minority carriers a distance of 1 cm in 100μs. Find the drift velocity and the diffusivity of the minority carriers.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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3. At 300 K, minority carriers (holes) are injected into a homogeneous n-type
semiconductor sample at one point. An applied field of 50 V/cm is applied across the sample, and the field moves these minority carriers a distance of 1 cm in 100μs. Find the drift velocity and the diffusivity of the minority carriers.
(HINT: The data in the problem enable you to deduce the drift velocity of the holes as well as their mobility. From the latter you obtain the diffusivity, using Einstein's relation.

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