at 1 atm. Assume that the air consists of 100% oxygen. How long does it take to deposit one atomic layer of oxygen on the wafer surface, assuming 100% adhesion?

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Author:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste
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Chapter1: Chemical Foundations
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A silicon wafer sits on a bench in the laboratory at a temperature of 300K and a pressure
at 1 atm. Assume that the air consists of 100% oxygen. How long does it take to deposit
one atomic layer of oxygen on the wafer surface, assuming 100% adhesion?
Transcribed Image Text:A silicon wafer sits on a bench in the laboratory at a temperature of 300K and a pressure at 1 atm. Assume that the air consists of 100% oxygen. How long does it take to deposit one atomic layer of oxygen on the wafer surface, assuming 100% adhesion?
Nav=6.022×1023 /mol
k = 1.38×10-23 J/K
The impinge rate of gas molecules (atoms) hitting the substrate surface (number of
particles per unit area per unit time):
P
√2TankT
where P is the pressure, m is mass of the molecule.
kT
The mean free path of a gas molecule: λ =·
√₂7Pd²
where d is the diameter of the gas
molecule.
Kinetic gas theory: PV = NkT, V is the volume for one mole gas.
Transcribed Image Text:Nav=6.022×1023 /mol k = 1.38×10-23 J/K The impinge rate of gas molecules (atoms) hitting the substrate surface (number of particles per unit area per unit time): P √2TankT where P is the pressure, m is mass of the molecule. kT The mean free path of a gas molecule: λ =· √₂7Pd² where d is the diameter of the gas molecule. Kinetic gas theory: PV = NkT, V is the volume for one mole gas.
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