Are the dopant concentrations of acceptors and donors the same for diodes with "short" and "long" p-sides if all other values such as the reverse breakdown voltage, current and forward bias voltage are kept the same?
Are the dopant concentrations of acceptors and donors the same for diodes with "short" and "long" p-sides if all other values such as the reverse breakdown voltage, current and forward bias voltage are kept the same?
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Are the dopant concentrations of acceptors and donors the same for diodes with "short" and "long" p-sides if all other values such as the reverse breakdown voltage, current and forward bias voltage are kept the same?
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