Are the dopant concentrations of acceptors and donors the same for diodes with "short" and "long" p-sides if all other values such as the reverse breakdown voltage, current and forward bias voltage are kept the same?
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Are the dopant concentrations of acceptors and donors the same for diodes with "short" and "long" p-sides if all other values such as the reverse breakdown voltage, current and forward bias voltage are kept the same?
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