Answer the following: a) Define the stability factor (Steo) and derive its equation for Fixed Bias Configuration circuit. b) Draw the equivalent circuit for the Darlington pair transistor and prove the mathematical relationship: BDp B1 x B2. c) Explain why the drain current (Ip = 0A) for E-MOSFET for the values of Vee less %3D %3D than the threshold level (VT). It needs to be done quickly, and it needs to be

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BJT (Bipolar Junction Transistor)

A BJT is a semiconductor device with 3 terminals that consist of a p-n junction diode that can amplify the signal or current. It is a current-controlled device. The three BJT terminals are base, collector, and emitter. The BJT works with the charge carrier, the two type of carriers in the BJT are holes and electrons, the charge carriers flow by the process of recombination. The signal to be amplifier is generally given as the input at the base terminal and an amplified form of it is available at the collector terminal.