An ideal PN junction has uniform doping on both sides of the junctions. The dopingconcentrations are N, = 10' n, , N¸ =10ʻ n, . The semiconductor has n, = 2.0×10º cm³ and%3Dpermittivity e, = 5€, (E, is given in the formula sheet). At T=300K, please decide thefollowing parameters when the PN junction is under equilibrium condition(1) the built-in potential V;(1) junction width W;(2) |Em«|-

Part (1): The mathematical expression for the built-in potential is given by: Vbi=kTqlnNaNdni2 Here,…

An ideal PN junction has uniform doping on both sides of the junctions. The doping concentrations are N, = 10'n, , N¸ =10° n, . The semiconductor has n, = 2.0×10º cm³ and permittivity ɛ, = 5ɛ, ( E,is given in the formula sheet). At T=300K, please decide the following parameters when the PN junction is under equilibrium condition (1) the built-in potential Vµ; (1) junction width W; (2) Emax-

An ideal PN junction has uniform doping on both sides of the junctions. The doping concentrations are N, = 10'n, , N¸ =10° n, . The semiconductor has n, = 2.0×10º cm³ and permittivity ɛ, = 5ɛ, ( E,is given in the formula sheet). At T=300K, please decide the following parameters when the PN junction is under equilibrium condition (1) the built-in potential Vµ; (1) junction width W; (2) Emax-

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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