a. Using the characteristics of the first figure, determine ID and VD for the circuit of the second figure b. Repeat part (a) with R = 0.57 kilo-ohms. c. Repeat part (a) with R = 0.78 kilo-ohm. d. Is the level of VD relatively close to 0.7 V in each case?
a. Using the characteristics of the first figure, determine ID and VD for the circuit of the second figure b. Repeat part (a) with R = 0.57 kilo-ohms. c. Repeat part (a) with R = 0.78 kilo-ohm. d. Is the level of VD relatively close to 0.7 V in each case?
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a. Using the characteristics of the first figure, determine ID and VD for the circuit of the second figure
b. Repeat part (a) with R = 0.57 kilo-ohms.
c. Repeat part (a) with R = 0.78 kilo-ohm.
d. Is the level of VD relatively close to 0.7 V in each case?
![Ip (mA)
30
25
20-
15
10
F3
10
12 Vp (V)
11
0.7 V](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fb62e52a4-0eb0-44b7-869c-35ba9d1d3d02%2Fdab5cbac-8daf-4bd1-9058-7c9a8027d341%2Fbr5lkrm_processed.png&w=3840&q=75)
Transcribed Image Text:Ip (mA)
30
25
20-
15
10
F3
10
12 Vp (V)
11
0.7 V
![+ VD.
Si
+
E= 6 V
R20.2 k V,](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fb62e52a4-0eb0-44b7-869c-35ba9d1d3d02%2Fdab5cbac-8daf-4bd1-9058-7c9a8027d341%2Fwt1tcfh_processed.png&w=3840&q=75)
Transcribed Image Text:+ VD.
Si
+
E= 6 V
R20.2 k V,
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