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for VE (referred to as Early Voltage) shown in the figure in terms of VGS, VDS, Vthn and λn. (b) For a PMOS transistor, first sketch the IDS-VDs curve and the location of VE (similar to the one above for the NMOS but pay attention to the signs (+ or -)). Then solve the same problem above for the PMOS transistor. (a) With channel length modulation, the current of an NMOS transistor operated in saturation region is given by the following modified equation 1 W IDS = Mn Cox 2 (VGS - Vthn) 2 (1 + λn VDS) L and is shown in the figure to the right. Derive the expression IDS → VDS VE

for VE (referred to as Early Voltage) shown in the figure in terms of VGS, VDS, Vthn and λn. (b) For a PMOS transistor, first sketch the IDS-VDs curve and the location of VE (similar to the one above for the NMOS but pay attention to the signs (+ or -)). Then solve the same problem above for the PMOS transistor. (a) With channel length modulation, the current of an NMOS transistor operated in saturation region is given by the following modified equation 1 W IDS = Mn Cox 2 (VGS - Vthn) 2 (1 + λn VDS) L and is shown in the figure to the right. Derive the expression IDS → VDS VE

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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for VE (referred to as Early Voltage) shown in the figure in terms of VGS, VDS, Vthn and λn. (b) For a PMOS transistor, first sketch the IDS-VDs curve and the location of VE (similar to the one above for the NMOS but pay attention to the signs (+ or -)). Then solve the same problem above for the PMOS transistor.
Transcribed Image Text:for VE (referred to as Early Voltage) shown in the figure in terms of VGS, VDS, Vthn and λn. (b) For a PMOS transistor, first sketch the IDS-VDs curve and the location of VE (similar to the one above for the NMOS but pay attention to the signs (+ or -)). Then solve the same problem above for the PMOS transistor.
(a) With channel length modulation, the current of an NMOS transistor operated in saturation region is given by the following modified equation 1 W IDS = Mn Cox 2 (VGS - Vthn) 2 (1 + λn VDS) L and is shown in the figure to the right. Derive the expression IDS → VDS VE
Transcribed Image Text:(a) With channel length modulation, the current of an NMOS transistor operated in saturation region is given by the following modified equation 1 W IDS = Mn Cox 2 (VGS - Vthn) 2 (1 + λn VDS) L and is shown in the figure to the right. Derive the expression IDS → VDS VE
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