for VE (referred to as Early Voltage) shown in the figure in terms of VGS, VDS, Vthn and λn. (b) For a PMOS transistor, first sketch the IDS-VDs curve and the location of VE (similar to the one above for the NMOS but pay attention to the signs (+ or -)). Then solve the same problem above for the PMOS transistor. (a) With channel length modulation, the current of an NMOS transistor operated in saturation region is given by the following modified equation 1 W IDS = Mn Cox 2 (VGS - Vthn) 2 (1 + λn VDS) L and is shown in the figure to the right. Derive the expression IDS → VDS VE
for VE (referred to as Early Voltage) shown in the figure in terms of VGS, VDS, Vthn and λn. (b) For a PMOS transistor, first sketch the IDS-VDs curve and the location of VE (similar to the one above for the NMOS but pay attention to the signs (+ or -)). Then solve the same problem above for the PMOS transistor. (a) With channel length modulation, the current of an NMOS transistor operated in saturation region is given by the following modified equation 1 W IDS = Mn Cox 2 (VGS - Vthn) 2 (1 + λn VDS) L and is shown in the figure to the right. Derive the expression IDS → VDS VE
Introductory Circuit Analysis (13th Edition)
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Question
![for VE (referred to as Early Voltage) shown in the figure in terms of VGS, VDS, Vthn and λn.
(b) For a PMOS transistor, first sketch the IDS-VDs curve and the location of VE (similar to the one
above for the NMOS but pay attention to the signs (+ or -)). Then solve the same problem above
for the PMOS transistor.](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F1da88d38-e18c-40f1-9bb8-69bad3269ec7%2F89a39831-171b-4fc8-8971-930ddbbd2116%2Fbqe0y4p_processed.png&w=3840&q=75)
Transcribed Image Text:for VE (referred to as Early Voltage) shown in the figure in terms of VGS, VDS, Vthn and λn.
(b) For a PMOS transistor, first sketch the IDS-VDs curve and the location of VE (similar to the one
above for the NMOS but pay attention to the signs (+ or -)). Then solve the same problem above
for the PMOS transistor.
![(a) With channel length modulation, the current of an
NMOS transistor operated in saturation region is given by
the following modified equation
1
W
IDS
=
Mn Cox
2
(VGS - Vthn) 2 (1 + λn VDS)
L
and is shown in the figure to the right. Derive the expression
IDS
→ VDS
VE](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F1da88d38-e18c-40f1-9bb8-69bad3269ec7%2F89a39831-171b-4fc8-8971-930ddbbd2116%2F4axlxz1_processed.png&w=3840&q=75)
Transcribed Image Text:(a) With channel length modulation, the current of an
NMOS transistor operated in saturation region is given by
the following modified equation
1
W
IDS
=
Mn Cox
2
(VGS - Vthn) 2 (1 + λn VDS)
L
and is shown in the figure to the right. Derive the expression
IDS
→ VDS
VE
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