A uniform piece of semiconductor is 1 μm long. If the low-field mobility is equal to 1350 cm²/vs and the saturation velocity of the carriers is 1 x 107 cm/s, calculate the maximum allowable voltage such that the effective mobility is only 20% lower than low-field mobility. V = mV Round your answer to 2 decimal places.
A uniform piece of semiconductor is 1 μm long. If the low-field mobility is equal to 1350 cm²/vs and the saturation velocity of the carriers is 1 x 107 cm/s, calculate the maximum allowable voltage such that the effective mobility is only 20% lower than low-field mobility. V = mV Round your answer to 2 decimal places.
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![Question 7
A uniform piece of semiconductor is 1 μm long. If the low-field mobility is equal to 1350 cm²/Vs and the saturation
velocity of the carriers is 1 x 107 cm/s, calculate the maximum allowable voltage such that the effective mobility is only
20% lower than low-field mobility.
V =
mv
Round your answer to 2 decimal places.](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Ff7c0c0a0-ebc7-4a01-aeda-8f06811db46e%2Fbd80438d-0030-4cfa-b8dd-a25964aa8ac2%2Fd1s65fe_processed.png&w=3840&q=75)
Transcribed Image Text:Question 7
A uniform piece of semiconductor is 1 μm long. If the low-field mobility is equal to 1350 cm²/Vs and the saturation
velocity of the carriers is 1 x 107 cm/s, calculate the maximum allowable voltage such that the effective mobility is only
20% lower than low-field mobility.
V =
mv
Round your answer to 2 decimal places.
![Question 8
An n-type piece of silicon experiences an electric field equal to 0.1 V/μm. What doping level is necessary to provide a
current density of 0.5 mA/μm² under these conditions. Assume the hole current is negligible.
n =
electrons/cm³
Round your answer to 0 decimal places.](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Ff7c0c0a0-ebc7-4a01-aeda-8f06811db46e%2Fbd80438d-0030-4cfa-b8dd-a25964aa8ac2%2Fvj1nb6b_processed.png&w=3840&q=75)
Transcribed Image Text:Question 8
An n-type piece of silicon experiences an electric field equal to 0.1 V/μm. What doping level is necessary to provide a
current density of 0.5 mA/μm² under these conditions. Assume the hole current is negligible.
n =
electrons/cm³
Round your answer to 0 decimal places.
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