A typical n-type GaAs Gunn diode has electron density of n=1018 /cm3 , electron density and mobility at lower valley nl=1016/m3 and μl= 8000 cm2 /Vs , electron density and mobility at upper valley nu=1014/m3 and μu=180 cm2 /Vs temperature T=300K. Determine the conductivity and resistivity of the diode and show parametric values on typical graph of 2 valley model theory.
A typical n-type GaAs Gunn diode has electron density of n=1018 /cm3 , electron density and mobility at lower valley nl=1016/m3 and μl= 8000 cm2 /Vs , electron density and mobility at upper valley nu=1014/m3 and μu=180 cm2 /Vs temperature T=300K. Determine the conductivity and resistivity of the diode and show parametric values on typical graph of 2 valley model theory.
Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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A typical n-type GaAs Gunn diode has electron density of n=1018 /cm3
, electron density and
mobility at lower valley nl=1016/m3 and μl= 8000 cm2
/Vs , electron density and mobility at
upper valley nu=1014/m3 and μu=180 cm2
/Vs temperature T=300K. Determine the
conductivity and resistivity of the diode and show parametric values on typical graph of 2
valley model theory.
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