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(a) The electron concentration in a piece of Si at 300 K is 105 cm³. What is the hole concentration? (b) A semiconductor is doped with impurity concentrations Nd and Na such that Na Na >> n; and all the impurities are ionized. Determine n and p. (c) In a silicon sample at T = 300 K, the Fermi level is located at 0.26 eV (10 kT) above the intrinsic Fermi level. What are the hole and electron concentrations? (d) What are the hole and electron concentration at T = 800 K for the sample in part (c), and where approximately is EF? Comment on your results.

(a) The electron concentration in a piece of Si at 300 K is 105 cm³. What is the hole concentration? (b) A semiconductor is doped with impurity concentrations Nd and Na such that Na Na >> n; and all the impurities are ionized. Determine n and p. (c) In a silicon sample at T = 300 K, the Fermi level is located at 0.26 eV (10 kT) above the intrinsic Fermi level. What are the hole and electron concentrations? (d) What are the hole and electron concentration at T = 800 K for the sample in part (c), and where approximately is EF? Comment on your results.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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(a) The electron concentration in a piece of Si at 300 K is 105 cm³. What is the hole concentration? (b) A semiconductor is doped with impurity concentrations Nd and Na such that Na Na >> n; and all the impurities are ionized. Determine n and p. (c) In a silicon sample at T = 300 K, the Fermi level is located at 0.26 eV (10 kT) above the intrinsic Fermi level. What are the hole and electron concentrations? (d) What are the hole and electron concentration at T = 800 K for the sample in part (c), and where approximately is EF? Comment on your results.
Transcribed Image Text:(a) The electron concentration in a piece of Si at 300 K is 105 cm³. What is the hole concentration? (b) A semiconductor is doped with impurity concentrations Nd and Na such that Na Na >> n; and all the impurities are ionized. Determine n and p. (c) In a silicon sample at T = 300 K, the Fermi level is located at 0.26 eV (10 kT) above the intrinsic Fermi level. What are the hole and electron concentrations? (d) What are the hole and electron concentration at T = 800 K for the sample in part (c), and where approximately is EF? Comment on your results.
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