A silicon detector contains a photoconductive layer of thickness l = 20um. The refrac- tive index of silicon is 4 and the absorption coefficient (@) of silicon in cm-1 is given by 10(7- 6000 a = where A is wavelength in Å. Calculate the A at which the quantum efficiency loss due to penetration through the device is equal to that due to reflection at the surface.
A silicon detector contains a photoconductive layer of thickness l = 20um. The refrac- tive index of silicon is 4 and the absorption coefficient (@) of silicon in cm-1 is given by 10(7- 6000 a = where A is wavelength in Å. Calculate the A at which the quantum efficiency loss due to penetration through the device is equal to that due to reflection at the surface.
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Transcribed Image Text:A silicon detector contains a photoconductive layer of thickness l = 20µm. The refrac-
tive index of silicon is 4 and the absorption coefficient (a) of silicon in cm-1 is given
%3D
by
3A
6000
a =
where A is wavelength in Å. Calculate the A at which the quantum efficiency loss due
to penetration through the device is equal to that due to reflection at the surface.
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