A silicon bar has non uniform doping profile in the middle. A constant light source uniformly illuminates the non uniformly doped region that create excess carriers. Qualitatively discuss the distribution of these excess carriers? Can we generate current out of this device? If yes, determine the current flow generated by electrons and holes. Silicon

A silicon bar has non uniform doping profile in the middle. A constant light source uniformly illuminates the non uniformly doped region that create excess carriers. Qualitatively discuss the distribution of these excess carriers? Can we generate current out of this device? If yes, determine the current flow generated by electrons and holes. Silicon