A Si semiconductor at T=300 K is initially doped with donors at a concentration of N=5 x 1015 cm3. Acceptors are to be added to form a compensated p-type material. The resistor is to have a resistance of 10 kN and handle a current density of 50 A/cm² when 5 V is applied.
A Si semiconductor at T=300 K is initially doped with donors at a concentration of N=5 x 1015 cm3. Acceptors are to be added to form a compensated p-type material. The resistor is to have a resistance of 10 kN and handle a current density of 50 A/cm² when 5 V is applied.
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Transcribed Image Text:A Si semiconductor at T=300 K is initially doped with donors at a concentration of
Ng=5 x 1015 cm3. Acceptors are to be added to form a compensated p-type
material. The resistor is to have a resistance of 10 kn and handle a current
density of 50 A/cm² when 5 V is applied.
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