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A Si sample is doped with donor impurities No =5*1016 /cm ,then acceptor impurities are added with Na =8*10"/cm, We give: n, = 1010 / cm, q = 1.6*10 19 C, H. = 1350 cm /N.s, u, = 350 cm/Ns, E = 8.85 10 14 and e, = 11.5, also kT = 26 meV and W = 0.36 um then: The conductivity of the n region a, is: Oa. 44.8 1/(Ohm.cm) Ob. 10.8 1/(Ohm.cm) Oc 1728 1/(Ohm.cm) Od. 28 1/(Ohmcm) The built-in potential across the junction V= Ca. 874.18 mv Ob. 559.48 mv Oc. 699.35 mv 1O02 72

A Si sample is doped with donor impurities No =5*1016 /cm ,then acceptor impurities are added with Na =8*10"/cm, We give: n, = 1010 / cm, q = 1.6*10 19 C, H. = 1350 cm /N.s, u, = 350 cm/Ns, E = 8.85 10 14 and e, = 11.5, also kT = 26 meV and W = 0.36 um then: The conductivity of the n region a, is: Oa. 44.8 1/(Ohm.cm) Ob. 10.8 1/(Ohm.cm) Oc 1728 1/(Ohm.cm) Od. 28 1/(Ohmcm) The built-in potential across the junction V= Ca. 874.18 mv Ob. 559.48 mv Oc. 699.35 mv 1O02 72

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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A Si sample is doped with donor impurities No =5*1016 /cm then acceptor impurities are added with Na =8*10"/cm, We give: n, = 1010 / cm', q = 1.6*10 19 C, H. = 1350 cm/V.s, He = 350 cm/Vs. Eo = 8.85 10 14 and , = 11.5, also kT = 26 meV and W = 0.36 um then: The conductivity of the n region a, is: Oa. 44.8 1/(Ohm.cm) Ob. 10.8 1/(Ohm.cm) Oc. 1728 1/(Ohm.cm) Od. 28 1/(Ohm.cm) The built-in potential across the junction V= Ca. 874.18 mV Ob. 559.48 mv Oc. 699.35 mV Od. 1092.73 mV
Transcribed Image Text:A Si sample is doped with donor impurities No =5*1016 /cm then acceptor impurities are added with Na =8*10"/cm, We give: n, = 1010 / cm', q = 1.6*10 19 C, H. = 1350 cm/V.s, He = 350 cm/Vs. Eo = 8.85 10 14 and , = 11.5, also kT = 26 meV and W = 0.36 um then: The conductivity of the n region a, is: Oa. 44.8 1/(Ohm.cm) Ob. 10.8 1/(Ohm.cm) Oc. 1728 1/(Ohm.cm) Od. 28 1/(Ohm.cm) The built-in potential across the junction V= Ca. 874.18 mV Ob. 559.48 mv Oc. 699.35 mV Od. 1092.73 mV
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