A Si pn-junetion has a cross seetional area of 1x10 cm, at 300Ka forward bias voltage of v results in 1.5x1016 cm excess holes at the edge position of the depletion region in the n-side of the junction, assuming a hole lifetime of 1 ps, then the hole current at a penetration depth of 5 pm in the neutral n-region will be: O 5.460e-5 A O 5.694e-6 A O 1.665e-8 A O 2574e-6 A 0 700

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A Si pn-junetion has a cross seetional area of 1x10 cm, at 300Ka forward bias voltage of
4 V results in 1.5x1016 cm excess holes at the edge position of the depletion region in the
n-side of the junction, assuming a hole lifetime of 1 ps, then the hole current at a
penetration depth of 5 pum in the neutral n-region will be:
O 5.460e-5 A
O 5.694e-6 A
O 1.665e-8 A
O 2574e-6 A
O 7 800P-6 A
Transcribed Image Text:A Si pn-junetion has a cross seetional area of 1x10 cm, at 300Ka forward bias voltage of 4 V results in 1.5x1016 cm excess holes at the edge position of the depletion region in the n-side of the junction, assuming a hole lifetime of 1 ps, then the hole current at a penetration depth of 5 pum in the neutral n-region will be: O 5.460e-5 A O 5.694e-6 A O 1.665e-8 A O 2574e-6 A O 7 800P-6 A
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