UNIVERSAL CONSTANTS Properties SEMICONDUCTOR -34 6.63 x 10 J.s Si Ge GaAs 9.11 x 10-31 Kg E, (eV) п, (ст-3) Hn (cm2/V – s) Hp (cm2/V - s) Ne (cm-3) N (cm-3) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 1.602 x 10-19 C 1500 3900 8500 8.85 x 10 12 Eo F/m 450 1900 400 -34 1.05 x 10 J 2.78 x 1019 1.04 x 1019 4.45 x 1017 6 x 1018 K 8.6 x 10-5 eV/K 9.84 x 1018 7.72 x 1018 KT/q 26 mV (T = 300 K) 26 meV (T = 300 K) 3 x 10% m/s = 3.66 m /m. 0.082 0.98 0.067 KT m, /m. , (F/m) 0.28 0.49 0.45 11.7 16 13.1 Nair = 1 NGaAs = Some useful relations

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: Si, Ge, GaAs Parameters and Universal Constants
UNIVERSAL CONSTANTS
Properties
SEMICONDUCTOR
6.63 х 10-34 Js
9.11 x 10-31 Kg
h
Si
Ge
Ga As
mo
Eg (eV)
n; (cm-3)
Hn (cm²/V – s)
Hp (cm²/V – s)
Ne (cm-3)
N. (cm-3)
1.1
0.67
1.42
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
1.602 x 10-19 C
8.85 x 10
1500
3900
8500
12
F/m
1.05 x 10-34 J – s
8.6 x 10-6 eV/K
26 mV (T %3D 300 К)
26 meV (T = 300 K)
3 x 10° m/s
Eo
450
1900
400
2.78 x 1019 | 1.04 × 1019 4.45 x 1017
6 x 1018
K
9.84 × 1018
7.72 × 1018
KT/q
m /m.
m, /m.
e, (F/m)
0.082
0.98
0.067
KT
%3D
0.28
0.49
0.45
11.7
16
13.1
nair
1
NGAAS = 3.66
Some useful relations
EGAL,Ga -z As(x) = 1.424 +1.247x
Egin,Gaj -zAs(x) = 0.36+ 1.064.r
1 eV = 1.602 × 10-19 J
1 KG = 1 × 10-5 Wb/cm2
%3D
Transcribed Image Text:: Si, Ge, GaAs Parameters and Universal Constants UNIVERSAL CONSTANTS Properties SEMICONDUCTOR 6.63 х 10-34 Js 9.11 x 10-31 Kg h Si Ge Ga As mo Eg (eV) n; (cm-3) Hn (cm²/V – s) Hp (cm²/V – s) Ne (cm-3) N. (cm-3) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 1.602 x 10-19 C 8.85 x 10 1500 3900 8500 12 F/m 1.05 x 10-34 J – s 8.6 x 10-6 eV/K 26 mV (T %3D 300 К) 26 meV (T = 300 K) 3 x 10° m/s Eo 450 1900 400 2.78 x 1019 | 1.04 × 1019 4.45 x 1017 6 x 1018 K 9.84 × 1018 7.72 × 1018 KT/q m /m. m, /m. e, (F/m) 0.082 0.98 0.067 KT %3D 0.28 0.49 0.45 11.7 16 13.1 nair 1 NGAAS = 3.66 Some useful relations EGAL,Ga -z As(x) = 1.424 +1.247x Egin,Gaj -zAs(x) = 0.36+ 1.064.r 1 eV = 1.602 × 10-19 J 1 KG = 1 × 10-5 Wb/cm2 %3D
A Si photo-detector has a length of L 10 jum and a hole lifetime of to 1x 10 s. If a voltage of 7 V is
applied across the detector length, the detector gain "G" at the applied voltage will be:
Select one:
OA. Gph = 14.000
OB. Gph 1.750
OC. Gph 35.000
O D. Gph 5.600
OE. Gph = 4.095
Transcribed Image Text:A Si photo-detector has a length of L 10 jum and a hole lifetime of to 1x 10 s. If a voltage of 7 V is applied across the detector length, the detector gain "G" at the applied voltage will be: Select one: OA. Gph = 14.000 OB. Gph 1.750 OC. Gph 35.000 O D. Gph 5.600 OE. Gph = 4.095
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