A semiconductor material is uniformly doped with Boron atoms. At t=0, excess carriers has been created to a concentration of 10^15 cm^3 . A semiconductor material is uniformly doped with Boron atoms. At t-0,excess carriers has been created to a concentration of 10° cmminority carrier lifetime is 5 us. For t> 0 , assume that excess carrier-3Thegeneration rate g' = 0 and electric field E = 0.(1) What are the minority carriers in this material, electrons or holes?(2) Derive the time-dependent excess carrier concentration for t> 0 (theanswer should be in form of a time-dependent function);(3) What is the excess carrier concentration when t=3 µs?(4) What is the excess carrier concentration when t= ∞ (∞ representsinfinity)?

(a). As the boron has 3 valence electrons. Thus, there is a vacancy for the 4th electron. With the…

A semiconductor material is uniformly doped with Boron atoms. At F0, -3 excess carriers has been created to a concentration of 10°cm³. minority carrier lifetime is 5 us. For t> 0, assume that excess carrier The generation rate g' = 0 and electric field E = 0. (1) What are the minority carriers in this material, electrons or holes? (2) Derive the time-dependent excess carrier concentration for t> 0 (the answer should be in form of a time-dependent function); (3) What is the excess carrier concentration when t=3 µs? (4) What is the excess carrier concentration when t= ∞ (∞ represents infinity)?

A semiconductor material is uniformly doped with Boron atoms. At F0, -3 excess carriers has been created to a concentration of 10°cm³. minority carrier lifetime is 5 us. For t> 0, assume that excess carrier The generation rate g' = 0 and electric field E = 0. (1) What are the minority carriers in this material, electrons or holes? (2) Derive the time-dependent excess carrier concentration for t> 0 (the answer should be in form of a time-dependent function); (3) What is the excess carrier concentration when t=3 µs? (4) What is the excess carrier concentration when t= ∞ (∞ represents infinity)?