A rectangular slab (length 2.5 cm, width 1.5 cm, thickness 5.0 mm) of an unknown semiconductor with an unknown dopant was analyzed by placing it under a perpendicular magnetic field of strength 0.10 T in the +y direction, as well as subjecting it to a current of 7.5 A in the +x direction. A voltmeter measured that the potential on the top of the slab (as seen from the front) is 93.75 mV higher than the bottom. What is the majority charge carrier?Justify why.
A rectangular slab (length 2.5 cm, width 1.5 cm, thickness 5.0 mm) of an unknown semiconductor with an unknown dopant was analyzed by placing it under a perpendicular magnetic field of strength 0.10 T in the +y direction, as well as subjecting it to a current of 7.5 A in the +x direction. A voltmeter measured that the potential on the top of the slab (as seen from the front) is 93.75 mV higher than the bottom. What is the majority charge carrier?Justify why.
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A rectangular slab (length 2.5 cm, width 1.5 cm, thickness 5.0 mm) of an unknown semiconductor with an unknown dopant was analyzed by placing it under a perpendicular magnetic field of strength 0.10 T in the +y direction, as well as subjecting it to a current of 7.5 A in the +x direction.
A voltmeter measured that the potential on the top of the slab (as seen from the front) is 93.75 mV higher than the bottom.
What is the majority charge carrier?Justify why.
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