A piece of Si is doped with 10¹5 cm³ boron (B) atoms. Find n, p and p; (a) assume µ₁ = 1500 and up=400 cm²/V-s, (b) find values for electron and hole mobility form the mobility vs concentration graph.
A piece of Si is doped with 10¹5 cm³ boron (B) atoms. Find n, p and p; (a) assume µ₁ = 1500 and up=400 cm²/V-s, (b) find values for electron and hole mobility form the mobility vs concentration graph.
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A piece of Si is doped with 10¹5 cm³ boron (B) atoms. Find n, p and p; (a) assume µ₁ = 1500 and up = 400
cm²/V-s, (b) find values for electron and hole mobility form the mobility vs concentration graph.
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