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A MOS current mirror is shown below. For matched transistors Q₁ and Q2, with W/L = 20, μnСox = 300 µA/V², and Vtn = 0.4 V, design a current mirror to provide a current output - 10 160 μA with VDD = 2.0 V. Neglect the effect of channel-length modulation. Find: a) The value required for R in the current IREF b) The minimum value that V can have while Q2 still operates in saturation. VDD IREF R IDI VGS +1 310|11 Q2 Vo

A MOS current mirror is shown below. For matched transistors Q₁ and Q2, with W/L = 20, μnСox = 300 µA/V², and Vtn = 0.4 V, design a current mirror to provide a current output - 10 160 μA with VDD = 2.0 V. Neglect the effect of channel-length modulation. Find: a) The value required for R in the current IREF b) The minimum value that V can have while Q2 still operates in saturation. VDD IREF R IDI VGS +1 310|11 Q2 Vo

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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A MOS current mirror is shown below. For matched transistors Q₁ and Q2, with W/L = 20, μnСox = 300 µA/V², and Vtn = 0.4 V, design a current mirror to provide a current output - 10 160 μA with VDD = 2.0 V. Neglect the effect of channel-length modulation. Find: a) The value required for R in the current IREF b) The minimum value that V can have while Q2 still operates in saturation. VDD IREF R IDI VGS +1 310|11 Q2 Vo
Transcribed Image Text:A MOS current mirror is shown below. For matched transistors Q₁ and Q2, with W/L = 20, μnСox = 300 µA/V², and Vtn = 0.4 V, design a current mirror to provide a current output - 10 160 μA with VDD = 2.0 V. Neglect the effect of channel-length modulation. Find: a) The value required for R in the current IREF b) The minimum value that V can have while Q2 still operates in saturation. VDD IREF R IDI VGS +1 310|11 Q2 Vo
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