A long silicon pn junction photodiode has the following parameters at T =300 K: ni=1.5x1010 cm 3, Na =1016 cm3, Nd =2×1015 cm3, Dp= 10 cm2/s, Dn=25 cm?/s, Tro = 5×10- s, Tpo=10-7 s, er=11.7. The cross-sectional area of the diode is A=103 cm?. Assume that a reverse-biased voltage of 5 volts is applied and that a uniform generation rate for electron-hole pairs of GL=10²1 cm³³ s1 exists throughout the entire photodiode. The total steady-state photocurrent is equal to... 0.579 mA O 0.975 mA O 0.759 mA O 0.597 mA

A long silicon pn junction photodiode has the following parameters at T =300 K: ni=1.5x1010 cm 3, Na =1016 cm3, Nd =2×1015 cm3, Dp= 10 cm2/s, Dn=25 cm?/s, Tro = 5×10- s, Tpo=10-7 s, er=11.7. The cross-sectional area of the diode is A=103 cm?. Assume that a reverse-biased voltage of 5 volts is applied and that a uniform generation rate for electron-hole pairs of GL=10²1 cm³³ s1 exists throughout the entire photodiode. The total steady-state photocurrent is equal to... 0.579 mA O 0.975 mA O 0.759 mA O 0.597 mA

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

i need the answer quickly
Given Vi = 20V peak-to-peak, draw the output waveform for the said clamper circuit below:
A pn junction diode and Schottky diode have equal cross-section areas and have forward biased current of 0.5 mA. The reverse saturation current of the Schottky diode is 5X10-7A. The difference in the forward-bias voltage between the two diodes is 0.3 V. Determine the reverse saturation current (IS)) of pn junction diode.
The diode in the circuits below has a forward voltage drop of 0.6V and a breakdown voltage of 4V. Estimate the current, I_D, through the diode using the CVD model and voltages described above.
In a Si diode, the junction area is 0.25 mm2 and the doping density of the n-type region is ND = 1017 / cm3. ; Additive density of p-type region NA = 1015 /cm3. ni = 1,5 1010 /cm3, q = 1,602 10-19 C, VT = 25mV, r = 12, o = 8,85 10-14 F/cm, μn =1350 cm2/Vs, μp = 480 cm2/Vs, τn = τp = 1 At room temperature, a. Find the densities of minority and majority carriers in both regions b. What is the potential wall height?
In the given circuit, D1 is Silicon diode and D2 is a zener diode with breakdown voltage of 6.8V. Assuming RC time constant of circuit >> T. Find the Maximum and Minimum value of the output waveform.
Find values of the intrinsic carrier concentration ni for silicon at -55°C. 1.5 x 1010 carriers/cm3 O 5 x 1010 carriers/cm3 2.7 x 106 carriers/cm2 2.7 x 106 carriers/cm3
INCLUDE ALL THE DECIMALS.
If the forward voltage in a semiconductor diode changes from 0.7 V to 0.8 V, then forward current changes from 10 mA to 20 mA. The forward AC resistance of the diode is ?
pls solve it so fast I need it within 30 minutes
Which of the following is correct for a diode ○ A diode conducts in a forward bias A diode conducts in a reverse bias ○ A diode can never conduct as it is an insulator all the time. OA diode is a bi-directional device.