A long silicon pn junction photodiode has the following parameters at T =300 K: ni=1.5x1010 cm 3, Na =1016 cm3, Nd =2×1015 cm3, Dp= 10 cm2/s, Dn=25 cm?/s, Tro = 5×10- s, Tpo=10-7 s, er=11.7. The cross-sectional area of the diode is A=103 cm?. Assume that a reverse-biased voltage of 5 volts is applied and that a uniform generation rate for electron-hole pairs of GL=10²1 cm³³ s1 exists throughout the entire photodiode. The total steady-state photocurrent is equal to... 0.579 mA O 0.975 mA O 0.759 mA O 0.597 mA
A long silicon pn junction photodiode has the following parameters at T =300 K: ni=1.5x1010 cm 3, Na =1016 cm3, Nd =2×1015 cm3, Dp= 10 cm2/s, Dn=25 cm?/s, Tro = 5×10- s, Tpo=10-7 s, er=11.7. The cross-sectional area of the diode is A=103 cm?. Assume that a reverse-biased voltage of 5 volts is applied and that a uniform generation rate for electron-hole pairs of GL=10²1 cm³³ s1 exists throughout the entire photodiode. The total steady-state photocurrent is equal to... 0.579 mA O 0.975 mA O 0.759 mA O 0.597 mA
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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Transcribed Image Text:A long silicon pn junction photodiode has the following parameters at T =300 K:
ni=1.5×1010 cm³3, Na =1016 cm³, Nd =2×1015 cm³, Dp= 10 cm?/s, Dn=25 cm²/s,
Tmo = 5×10-7 s, Tp0=10-7 s, ɛr=11.7. The cross-sectional area of the diode is A=103
cm?. Assume that a reverse-biased voltage of 5 volts is applied and that a uniform
generation rate for electron-hole pairs of GL=1021 cm³ s1 exists throughout the
entire photodiode. The total steady-state photocurrent is equal to...
0.579 mA
0.975 mA
0.759 mA
0.597 mA
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