A light falling on a silicon sample provides the low level excitation and is removed at t 2 0. The electron concentration of sample is obtained as follow. The minority carrier lifetime is 1 µs. Find the generation rate at thermal equilibrium. n(t) , cm³ 1013 10* t, s

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A light falling on a silicon sample provides the low level excitation and is removed at t 2 0. The electron concentration of sample is obtained as follow. The
minority carrier lifetime is 1 ps.
Find the generation rate at thermal equilibrium.
n(t) , cm
1013
10*
+ t, s
Cevap:
Transcribed Image Text:A light falling on a silicon sample provides the low level excitation and is removed at t 2 0. The electron concentration of sample is obtained as follow. The minority carrier lifetime is 1 ps. Find the generation rate at thermal equilibrium. n(t) , cm 1013 10* + t, s Cevap:
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