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(a) Estimate the transconductance for the transis- tor in Fig. P4.18 for VGs=4 V and VDs = 4 V. (b) Repeat for VGS = 3 V and Vps = 4.5 V.

(a) Estimate the transconductance for the transis- tor in Fig. P4.18 for VGs=4 V and VDs = 4 V. (b) Repeat for VGS = 3 V and Vps = 4.5 V.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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**Transcription and Explanation** **Text:** (a) Estimate the transconductance for the transistor in Fig. P4.18 for \( V_{GS} = 4 \, \text{V} \) and \( V_{DS} = 4 \, \text{V} \). (b) Repeat for \( V_{GS} = 3 \, \text{V} \) and \( V_{DS} = 4.5 \, \text{V} \). **Graph Explanation:** The graph titled "Drain current vs. Drain-source voltage" illustrates the relationship between the drain current (\( I_D \)) in microamperes (µA) and the drain-source voltage (\( V_{DS} \)) in volts (V) for different gate-source voltages (\( V_{GS} \)). - **Y-axis:** Represents the drain current (\( I_D \)) in microamperes (µA) ranging from 0 to 800 µA. - **X-axis:** Represents the drain-source voltage (\( V_{DS} \)) in volts (V) ranging from 0 to 6 V. The graph contains four curves, each representing a different \( V_{GS} \): 1. \( V_{GS} = 5 \, \text{V} \) 2. \( V_{GS} = 4 \, \text{V} \) 3. \( V_{GS} = 3 \, \text{V} \) 4. \( V_{GS} = 2 \, \text{V} \) Each curve shows how the drain current (\( I_D \)) increases with the drain-source voltage (\( V_{DS} \)) for a fixed gate-source voltage (\( V_{GS} \)). Higher \( V_{GS} \) values result in higher drain currents for the same \( V_{DS} \). The curves start at the origin and tend to flatten as they reach higher \( V_{DS} \) values, indicating the saturation region of the transistor operation.
Transcribed Image Text:**Transcription and Explanation** **Text:** (a) Estimate the transconductance for the transistor in Fig. P4.18 for \( V_{GS} = 4 \, \text{V} \) and \( V_{DS} = 4 \, \text{V} \). (b) Repeat for \( V_{GS} = 3 \, \text{V} \) and \( V_{DS} = 4.5 \, \text{V} \). **Graph Explanation:** The graph titled "Drain current vs. Drain-source voltage" illustrates the relationship between the drain current (\( I_D \)) in microamperes (µA) and the drain-source voltage (\( V_{DS} \)) in volts (V) for different gate-source voltages (\( V_{GS} \)). - **Y-axis:** Represents the drain current (\( I_D \)) in microamperes (µA) ranging from 0 to 800 µA. - **X-axis:** Represents the drain-source voltage (\( V_{DS} \)) in volts (V) ranging from 0 to 6 V. The graph contains four curves, each representing a different \( V_{GS} \): 1. \( V_{GS} = 5 \, \text{V} \) 2. \( V_{GS} = 4 \, \text{V} \) 3. \( V_{GS} = 3 \, \text{V} \) 4. \( V_{GS} = 2 \, \text{V} \) Each curve shows how the drain current (\( I_D \)) increases with the drain-source voltage (\( V_{DS} \)) for a fixed gate-source voltage (\( V_{GS} \)). Higher \( V_{GS} \) values result in higher drain currents for the same \( V_{DS} \). The curves start at the origin and tend to flatten as they reach higher \( V_{DS} \) values, indicating the saturation region of the transistor operation.
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