(a)  Does the C2F6 flow rate affect the wafer-to-wafer variability in etch uniformity?  Use = 0.05. (b) Draw box plots to assist in the interpretation of the data from this experiment

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An article in Solid State Technology, "Orthogonal Design of Process Optimization and Its Application to Plasma Etching" by G.Z. Yin and D.W. Jillie (May, 1987) describes an experiment to determine the effect of C2F6 flow rate on the uniformity of the etch on a silicon wafer used in integrated circuit manufacturing.  Data for two flow rates are as follows:

 

C2F6

Uniformity Observation

(SCCM)

1

2

3

4

5

6

125

2.7

4.6

2.6

3.0

3.2

3.8

200

4.6

3.4

2.9

3.5

4.1

5.1

(a)  Does the C2F6 flow rate affect the wafer-to-wafer variability in etch uniformity?  Use = 0.05.

(b) Draw box plots to assist in the interpretation of the data from this experiment

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